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The NSDEMN11XV6T5 is a Common Cathode Quad epitaxial planar diode array designed for ultra-high-speed switching applications. It features four independent diodes in a single SOT-563 surface-mount package. The device supports a maximum DC reverse voltage of 80 V and an average rectified current of 100 mA per diode. Key electrical characteristics include a forward voltage of 1.2 V at 100 mA and a reverse leakage current of 100 nA at 70 V. The junction temperature range spans from -55°C to 150°C, with a fast reverse recovery time of 4 ns.
Verify the specific suffix (T5 vs T1) against the datasheet to ensure correct polarity configuration. Confirm RoHS compliance status if required by assembly specifications. Check for end-of-life notifications as availability may vary. Ensure the SOT-563 footprint matches the design layout before ordering.
Select this component when multiple fast-switching diodes are needed in a compact form factor. The common cathode arrangement simplifies circuit topology compared to discrete solutions. Consider the 80V rating and 100mA limit to ensure adequate headroom for the target application's voltage and current requirements.
This part belongs to onsemi's lineup of small-signal diode arrays. It complements other quad diode options like the NSDEMP11XV6T5G, which offers a common anode configuration. These devices serve as alternatives to discrete diodes where space savings and matched parameters are critical for performance consistency.
The NSDEMP11XV6T5G is a functional substitute but utilizes a common anode configuration rather than common cathode. Verify that the circuit topology supports the polarity difference. Other generic 80V 100mA quad diodes in SOT-563 packages may fit mechanically but require electrical parameter validation.