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NSF017120T2A0J is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is NSF017120T2A0/SOT8107/X.PAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for NSF017120T2A0J
- Description：NSF017120T2A0/SOT8107/X.PAK
- Series：*
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Single FETs, MOSFETs datasheet and documents for NSF017120T2A0J
Single FETs, MOSFETs Overview
The NSF017120T2A0J is a single N-channel Silicon Carbide (SiC) MOSFET manufactured by Nexperia USA Inc. It features a 1200 V drain-source voltage rating and a continuous drain current of 122 A at junction temperature. The device exhibits a maximum on-resistance of 26 mΩ. It is housed in a 7-pin X.PAK plastic package designed for surface mount applications with topside cooling capabilities.
Single FETs, MOSFETs Feature Summary
- Utilizes Silicon Carbide semiconductor technology for high-performance power switching
- Features a specialized X.PAK package enabling surface mounting with direct thermal dissipation through the top side
- Designed for high-voltage and high-current industrial power conversion applications
Single FETs, MOSFETs Applications
- Electric vehicle charging systems
- High-power industrial motor drives
- High-voltage DC-DC converters
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix J against the official Nexperia datasheet to confirm exact binning or packaging variations. Ensure the procurement documentation explicitly references the X.PAK package type and SiC material composition. Confirm that the component meets the required automotive or industrial qualification standards if applicable to the end design.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring high breakdown voltage combined with low conduction losses. The X.PAK package necessitates PCB layouts that support topside thermal contact for effective heat management. Evaluate gate drive requirements against the specified gate-source voltage limits to ensure reliable switching performance under high current loads.
Single FETs, MOSFETs Part Context
This part belongs to the NSF0x0120 series of Silicon Carbide MOSFETs from Nexperia. These devices are engineered to replace traditional silicon counterparts in high-efficiency applications. The series leverages SiC properties to achieve superior thermal performance and switching speeds compared to standard silicon MOSFETs.
Single FETs, MOSFETs Replacement Considerations
Direct replacements must match the 1200V rating, 122A current capacity, and 26mΩ on-resistance. Verify pin compatibility with the 7-pin X.PAK footprint. Alternative packages require significant redesign of both electrical parameters and thermal management infrastructure.
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