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Product Detailed Parameters
- Description：TRANS 2PNP DUAL 6-WDFN
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 PNP (Dual)
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：390mV @ 200mA, 2A
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：250 @ 100mA, 2V
- Power - Max：-
- Frequency - Transition：155MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-WDFN Exposed Pad
- Supplier Device Package：6-WDFN (2x2)
- Grade：-
- Qualification：-
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Overview
The NSS20200DMTTBG is a PNP bipolar junction transistor manufactured by onsemi. It features a collector-emitter voltage rating of -60 V and a maximum DC collector current of -4 A. The device is designed for low saturation voltage applications, with a specified collector-emitter saturation voltage of 170 mV at -2 A base current. It operates within a temperature range of -55 °C to +150 °C. The component is housed in an SOT-23-3 surface-mount package and complies with RoHS standards.
Feature Summary
- Optimized for low collector-emitter saturation voltage to minimize power loss in switching applications
- High gain bandwidth product supporting efficient operation at radio frequencies
- Designed for high thermal stability with an extended maximum operating temperature
Applications
- General-purpose switching circuits requiring low saturation voltage
- Driver stages in power management systems
- Logic interface circuits utilizing PNP transistors
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to confirm package type and tape-and-reel specifications. Ensure compliance with required environmental standards such as RoHS before finalizing procurement orders for production integration.
Selection Notes
Select this component when a PNP transistor with a -60 V rating and -4 A continuous current capability is required. Consider the low VCE(sat) specification for efficiency-critical designs. Verify that the SOT-23-3 package footprint aligns with the target PCB layout constraints.
Part Context
This part belongs to the NSS60 series of low VCE(sat) NPN/PNP transistors from onsemi. These devices are engineered for high-efficiency switching applications where minimizing voltage drop across the transistor is critical for overall system performance and thermal management.
Replacement Considerations
Direct substitutes include NSS60200LT1G and NSS60200DMT. Verify pinout compatibility and exact electrical parameter tolerances before substituting in existing designs.
