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The NSS40300DDR2G is a dual PNP bipolar junction transistor (BJT) from onsemi, housed in a surface-mount SOT-893 package. It features a maximum DC collector current of 3 A and a collector-emitter voltage (VCEO) of 40 V. The device exhibits a low collector-emitter saturation voltage of 400 mV at 1.5 A, with a minimum DC current gain (hFE) of 200. Power dissipation is rated at 2 W, and the transition frequency (fT) reaches 160 MHz. Operating temperatures range from -55°C to +150°C.
Verify the complete part number suffix, as 'NSS40300DDR2' typically corresponds to 'NSS40300DDR2G' for RoHS-compliant units. Confirm package type SOT-893 matches design requirements. Check manufacturer documentation for specific tape-and-reel quantities and handling precautions during assembly.
Select this component when a compact dual PNP solution is required for 40V, 3A applications. Compare against single-transistor alternatives if board space permits. Ensure thermal management supports 2W dissipation. Verify compatibility with driving logic levels given the 400mV saturation characteristic.
This device belongs to the NSS40300 series of low-voltage PNP transistors. It shares electrical characteristics with single-transistor variants like the NSS40300MZ4T3G but integrates two matched units in one package. The DDR2 suffix indicates the specific SOT-893 surface-mount housing used by onsemi.
Direct substitutes include other dual PNP transistors in SOT-893 packages with matching 40V/3A ratings. Single-transistor equivalents require two separate components. Verify pinout compatibility before substitution.