SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The NSS40300DDR2G is a PNP bipolar junction transistor manufactured by onsemi. It features a maximum collector-emitter voltage (VCEO) of 40 V and a continuous DC collector current of 3 A. The device operates within a temperature range of -55 °C to +150 °C. It utilizes an SOT-223 package with four terminals, providing a power dissipation rating of 2 W. Key electrical characteristics include a minimum DC current gain (hFE) of 200 and a transition frequency (fT) of 160 MHz.
Verify the specific ordering suffix against official manufacturer documentation to confirm exact packaging and tape specifications. Ensure component authenticity through authorized distribution channels. Confirm RoHS compliance status via the latest datasheet before integration into regulated assemblies.
Select this component when a PNP transistor with 40 V breakdown and 3 A current capacity is required. Consider the SOT-223 package constraints for thermal management and PCB layout. Verify that the 160 MHz transition frequency meets the switching speed requirements of the target circuit topology.
This part belongs to the NSS40300 series of low voltage PNP transistors from onsemi. The series is designed for applications requiring high efficiency and reliable performance in power management systems. The DDR2G suffix indicates specific reel packaging and manufacturing lot details defined by the manufacturer.
Consult official cross-reference guides for verified substitutes. Ensure replacement parts match the 40 V VCEO, 3 A IC, and SOT-223-4 package dimensions. Verify pinout compatibility and thermal resistance characteristics before implementation.