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Product Detailed Parameters
- Description：TRANS 2NPN DUAL 60V 1A SC-74
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：1A
- Voltage - Collector Emitter Breakdown (Max)：60V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 50mA, 1A
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：250 @ 100mA, 5V
- Power - Max：400mW
- Frequency - Transition：200MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-74, SOT-457
- Supplier Device Package：SC-74
- Grade：-
- Qualification：-
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Overview
The NSS60101DMR6T1G is a single NPN bipolar junction transistor manufactured by onsemi. It utilizes silicon technology and is housed in an SMD/SMT package. The device supports a maximum DC collector current of 1 A and withstands a collector-emitter voltage (VCEO) of 60 V, with a collector-base voltage (VCBO) of 60 V. The emitter-base voltage (VEBO) rating is 6 V. Key electrical characteristics include a low collector-emitter saturation voltage of 130 mV and a power dissipation capability of 2.27 W. The transition frequency (fT) is specified at 180 MHz. The component operates within a temperature range from -55 C to +150 C.
Feature Summary
- Low collector-emitter saturation voltage for efficient switching performance
- High power dissipation capability suitable for moderate current applications
- Wide operating temperature range for robust environmental stability
Applications
- General-purpose switching circuits
- Driver stages for loads requiring up to 1 A
- Power management interface logic
Procurement Notes
Verify the specific suffix R6 against official datasheets to confirm package type and tape-and-reel specifications. Ensure compatibility with surface-mount assembly processes. Confirm RoHS compliance status through manufacturer documentation prior to integration into regulated assemblies.
Selection Notes
Select this component when a single NPN transistor with 60 V breakdown and 1 A continuous current capacity is required. The low VCE(sat) makes it suitable for applications minimizing conduction losses. Compare fT requirements against the 180 MHz specification for high-speed switching needs.
Part Context
This part belongs to the NSS60101DMT series of NPN transistors designed for general-purpose use. It shares core electrical ratings with other variants in the family but differs in packaging and reel configuration. The DMR6 suffix indicates specific surface-mount packaging details distinct from LT or other suffixes.
Replacement Considerations
Direct substitutes must match the 60 V VCEO, 1 A IC, and NPN polarity. Verify package footprint compatibility. Check datasheets for equivalent VCE(sat) and fT values to ensure circuit performance parity.
