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The NST3904DXV6T5 is a dual NPN bipolar junction transistor (BJT) manufactured by onsemi. It utilizes silicon technology and is housed in an SOT-563-6 surface-mount package. The device features a maximum DC collector current of 200 mA and a collector-emitter voltage (VCEO) of 40 V. Additional electrical ratings include a collector-base voltage (VCBO) of 60 V, an emitter-base voltage (VEBO) of 7 V, and a power dissipation (Pd) of 500 mW. The gain-bandwidth product (fT) is specified at 300 MHz. Operating temperatures range from -55°C to +150°C.
Verify the specific ordering suffix against official documentation to ensure correct packaging and variant selection. Confirm RoHS compliance status through the manufacturer's latest environmental declarations prior to procurement. Cross-reference the component marking code with the datasheet to authenticate the physical device upon receipt.
Select this component when a dual NPN topology is required in a small outline package. The 300 MHz bandwidth supports high-frequency operations beyond standard general-purpose alternatives. Ensure the 500 mW thermal rating aligns with the application's power dissipation requirements and ambient temperature conditions.
This part belongs to the NST3904 series of dual transistors. It serves as a surface-mount alternative to traditional three-leaded devices, offering integrated dual NPN functionality. The series is designed for general-purpose applications where board space is limited but performance characteristics similar to standard discrete transistors are maintained.
The MBT3904DW1T3G is a documented substitute offering comparable NPN specifications.