SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The NST3904DXV6T5G is a dual NPN bipolar junction transistor manufactured by onsemi. It utilizes silicon technology and is housed in an SOT-563-6 surface-mount package. The device supports a maximum DC collector current of 200 mA and features a collector-emitter voltage (VCEO) of 40 V, with a collector-base voltage (VCBO) of 60 V and an emitter-base voltage (VEBO) of 6 V. Key electrical characteristics include a collector-emitter saturation voltage of 300 mV, power dissipation of 420 mW, and a gain-bandwidth product (fT) of 200 MHz. The component operates within a temperature range of -55°C to +150°C.
Verify the specific suffix against official manufacturer documentation to confirm exact reel specifications and tape-and-reel dimensions. Ensure the ordering part number matches the required packaging format for automated assembly processes. Cross-reference the datasheet revision date to confirm compliance with current environmental standards and material declarations before finalizing procurement orders.
Select this component when a dual NPN topology is required in a small outline package. Compare the 420 mW power dissipation limit against the target application's thermal requirements. Verify that the 200 mA current rating exceeds the maximum expected load current. Consider the SOT-563 footprint compatibility during PCB layout design to ensure proper soldering and thermal relief.
This part belongs to the NST3904 series of dual transistors from onsemi. It serves as a complementary or alternative solution to single-transistor configurations, reducing board space. The SOT-563 package allows for high-density mounting. It shares similar electrical ratings with other 40V NPN devices but offers integrated dual functionality.
Potential substitutes include the NST3904DP6T5G, which uses an SOT-963-6 package. Verify pinout compatibility and package dimensions before substitution. Other family members may require schematic adjustments due to differing internal resistor networks or pin assignments.