NST3906DP6T5G

$0.25

Description：TRANS 2PNP 40V 200MA SOT-963
Series：-

SKU:b7030e4ac008 Category: Bipolar Transistor Arrays Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS 2PNP 40V 200MA SOT-963
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT),Cut Tape (CT)
Transistor Type：2 PNP (Dual)
Current - Collector (Ic) (Max)：200mA
Voltage - Collector Emitter Breakdown (Max)：40V
Vce Saturation (Max) @ Ib, Ic：400mV @ 5mA, 50mA
Current - Collector Cutoff (Max)：-
DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 10mA, 1V
Power - Max：350mW
Frequency - Transition：250MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-963
Supplier Device Package：SOT-963
Grade：-
Qualification：-

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NST3906DP6T5G

Overview

The NST3906DP6T5G is a dual PNP bipolar junction transistor manufactured by onsemi. It features a SOT-963-6 surface-mount package and operates with silicon technology. The device supports a maximum DC collector current of 200 mA and a collector-emitter voltage (VCEO) of 40 V. Additional voltage ratings include a collector-base voltage (VCBO) of 60 V and an emitter-base voltage (VEBO) of 6 V. Power dissipation is rated at 420 mW, with a saturation voltage of 300 mV. The gain-bandwidth product (fT) reaches 200 MHz, and the unit weight is 1.190 mg. Operating temperatures range from -55°C to +150°C.

Feature Summary

Dual PNP configuration in a compact SMD package for space-constrained designs
High switching speed capability supported by 200 MHz gain-bandwidth product
Low saturation voltage for efficient power handling in switching applications

Applications

General-purpose switching circuits
Signal amplification stages
Driver circuits for low-power loads

Procurement Notes

Verify the exact ordering suffix against official onsemi documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with RoHS directives if required by the target application. Cross-reference the manufacturer part number with authorized distributors to validate authenticity and traceability before procurement.

Selection Notes

Select this component when a dual PNP transistor is required in a small outline package. Compare the 40 V VCEO and 200 mA IC limits against circuit requirements. Evaluate the 420 mW power dissipation and thermal characteristics relative to the PCB layout. Confirm that the SOT-963-6 footprint matches the design constraints.

Part Context

This part belongs to the NST3906DP6 series of dual bipolar transistors. It complements other onsemi discrete devices designed for general-purpose electronics. The dual configuration allows for matched performance in differential or push-pull topologies within a single compact housing.