NST3906DXV6T1G

Overview

The NST3906DXV6T1G is a dual PNP bipolar junction transistor manufactured by onsemi, housed in a surface-mount SOT-563-6 package. It features a maximum DC collector current of 200 mA and a collector-emitter voltage rating of 40 V. The device includes a collector-base voltage of 40 V and an emitter-base voltage limit of 5 V. Electrical characteristics specify a minimum DC current gain (hFE) of 60 and a transition frequency of 250 MHz. Power dissipation is rated at 500 mW, with a saturation voltage of 400 mV. The component operates within a temperature range of -55°C to +150°C.

Feature Summary

• Dual PNP configuration integrating two independent transistors in a single compact package for space-constrained designs.
• High-speed switching capability supported by a 250 MHz transition frequency suitable for general-purpose applications.
• Robust thermal performance allowing operation up to 150°C junction temperature.

Applications

• General-purpose signal switching circuits
• Low-power amplifier stages
• Digital logic interface buffers

Procurement Notes

Verify the specific ordering suffix against official onsemi documentation to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives as indicated in the manufacturer's datasheet. Cross-reference the part number with authorized distributors to validate authenticity and traceability before procurement.

Selection Notes

Select this component when a dual PNP configuration is required in a small outline package. Compare power dissipation ratings and current gains against alternative dual BJT arrays if higher thermal capacity or gain is needed. Verify that the 40V voltage rating aligns with the target circuit's maximum operating conditions.

Part Context

This part belongs to the NST3906DXV6 series of dual PNP transistors. It serves as a compact alternative to discrete single transistors, reducing board space. The SOT-563-6 package provides six terminals for two separate PNP elements, facilitating efficient layout in portable electronics.

Replacement Considerations

SMBT3906DW1T1G: Dual PNP in SC-88/SOT-363 package with similar electrical ratings but lower power dissipation.

FAQ

What is the maximum power dissipation for the NST3906DXV6T1G?

The maximum power dissipation is 500 mW.

Does the NST3906DXV6T1G contain one or two transistors?

It contains two independent PNP transistors in a dual configuration.

What is the minimum DC current gain specified for this device?

The minimum DC current gain (hFE) is 60.