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The NST3946DXV6T5G is a dual switching bipolar junction transistor (BJT) array manufactured by onsemi. It integrates complementary NPN and PNP transistors within a single SOT-563-6 surface-mount package. The device supports a maximum DC collector current of 200 mA and operates with a collector-emitter voltage (VCEO) of 40 V. Key electrical parameters include a collector-base voltage (VCBO) ranging from 40 V to 60 V, an emitter-base voltage (VEBO) between 5 V and 6 V, and a power dissipation rating of 500 mW. The unit features a gain-bandwidth product (fT) of 300 MHz for the NPN section and 250 MHz for the PNP section, with a minimum DC current gain (hFE) of 40.
Verify component authenticity through authorized distribution channels due to end-of-life status. Confirm RoHS compliance documentation matches specific manufacturing lots. Validate package integrity upon receipt to ensure solderability. Cross-reference datasheet revisions to align with current design specifications before finalizing procurement orders.
Select this component when a complementary NPN/PNP pair is required in a minimal footprint. Ensure the 40 V VCEO rating exceeds the maximum circuit voltage. Verify that the 200 mA current limit satisfies load requirements. Consider the SOT-563-6 thermal performance for power dissipation constraints in the target application environment.
This part belongs to the NST3946DXV6 series of dual BJT arrays. It serves as a compact alternative to discrete transistor pairs, reducing board space and assembly complexity. The SOT-563-6 package provides efficient thermal management for low-power switching tasks while maintaining standard pin compatibility for layout reuse.
Publicly confirmed substitute part numbers are not available in the provided source material. Designers should consult official obsolescence notices or manufacturer recommendations for direct replacements.