NST3946DXV6T5G

NST3946DXV6T5G

  • Description:TRANS NPN/PNP 40V 200MA SOT-563
  • Series:-

SKU:b0d39eee5334 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS NPN/PNP 40V 200MA SOT-563
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Bulk
  • Transistor Type:1 NPN, 1 PNP
  • Current - Collector (Ic) (Max):200mA
  • Voltage - Collector Emitter Breakdown (Max):40V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1V
  • Power - Max:500mW
  • Frequency - Transition:300MHz, 250MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563
  • Grade:-
  • Qualification:-

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NST3946DXV6T5G

Overview

The NST3946DXV6T5G is a dual switching bipolar junction transistor (BJT) array manufactured by onsemi. It integrates complementary NPN and PNP transistors within a single SOT-563-6 surface-mount package. The device supports a maximum DC collector current of 200 mA and operates with a collector-emitter voltage (VCEO) of 40 V. Key electrical parameters include a collector-base voltage (VCBO) ranging from 40 V to 60 V, an emitter-base voltage (VEBO) between 5 V and 6 V, and a power dissipation rating of 500 mW. The unit features a gain-bandwidth product (fT) of 300 MHz for the NPN section and 250 MHz for the PNP section, with a minimum DC current gain (hFE) of 40.

Feature Summary

  • Integrates complementary NPN and PNP switching transistors in a compact dual configuration
  • Designed for high-speed switching applications with defined gain-bandwidth characteristics
  • Utilizes silicon technology for reliable operation across extended temperature ranges

Applications

  • General-purpose switching circuits requiring complementary logic levels
  • Driver stages for low-power loads in consumer electronics
  • Signal routing and level shifting in digital interface designs

Procurement Notes

Verify component authenticity through authorized distribution channels due to end-of-life status. Confirm RoHS compliance documentation matches specific manufacturing lots. Validate package integrity upon receipt to ensure solderability. Cross-reference datasheet revisions to align with current design specifications before finalizing procurement orders.

Selection Notes

Select this component when a complementary NPN/PNP pair is required in a minimal footprint. Ensure the 40 V VCEO rating exceeds the maximum circuit voltage. Verify that the 200 mA current limit satisfies load requirements. Consider the SOT-563-6 thermal performance for power dissipation constraints in the target application environment.

Part Context

This part belongs to the NST3946DXV6 series of dual BJT arrays. It serves as a compact alternative to discrete transistor pairs, reducing board space and assembly complexity. The SOT-563-6 package provides efficient thermal management for low-power switching tasks while maintaining standard pin compatibility for layout reuse.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Designers should consult official obsolescence notices or manufacturer recommendations for direct replacements.

NST3946DXV6T5GNST3946DXV6T5G

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