NST65010MW6T1G

Overview

The NST65010MW6T1G is a dual matched PNP bipolar junction transistor housed in an SOT-363 package. It features a collector-emitter voltage of -65 V, collector-base voltage of -80 V, and emitter-base voltage of -5.0 V. The maximum continuous collector current is -100 mA with total device dissipation of 380 mW. DC current gain ranges from 220 to 475 at -10 mA. Current gain matching is within 10%, and base-emitter voltage matching is ≤ 2 mV. The gain-bandwidth product is 100 MHz. Operating temperature range is -55 °C to +150 °C.

Feature Summary

• Dual matched PNP transistors designed for portable products
• Eliminates need for costly trimming through parameter matching
• AEC-Q101 qualified and PPAP capable for automotive applications

Applications

• Current Mirrors
• Differential, Sense and Balanced Amplifiers
• Mixers
• Detectors and Limiters

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration. Confirm that the NSV prefix variant meets unique site and control change requirements if applicable. Ensure compliance with RoHS and halogen-free standards for the intended deployment environment.

Selection Notes

Select this component when precise matching between two PNP transistors is required in a compact form factor. Consider the complementary NPN equivalent NST65011MW6T1G for circuits requiring both polarities. Verify thermal management capabilities against the specified junction-to-ambient resistance.

Part Context

This part belongs to the NST65010M series of dual matched general purpose transistors. It is manufactured by onsemi using silicon technology. The device is available in tape and reel packaging for surface mount assembly.

Replacement Considerations

The datasheet identifies the complementary NPN equivalent as NST65011MW6T1G. No other direct replacement part numbers are documented in the provided source material.