NST847BDP6T5G

NST847BDP6T5G

$0.36
  • Description:TRANS 2NPN 45V 100MA SOT-963
  • Series:-

SKU:5906575c1f56 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN 45V 100MA SOT-963
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):45V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
  • Power - Max:350mW
  • Frequency - Transition:100MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-963
  • Supplier Device Package:SOT-963
  • Grade:-
  • Qualification:-

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NST847BDP6T5G

Overview

The NST847BDP6T5G is a dual general-purpose bipolar junction transistor (BJT) array manufactured by onsemi. It integrates one NPN and one PNP transistor within a single SOT-963-6 surface-mount package. The device supports a maximum DC collector current of 100 mA and operates with a collector-emitter voltage (VCEO) of 45 V and a collector-base voltage (VCBO) of 50 V. The emitter-base voltage ratings are 5 V for the NPN section and 6 V for the PNP section. Power dissipation reaches 420 mW, while the transition frequency (fT) is 100 MHz. Minimum DC current gain (hFE) is specified at 200 for the NPN and 220 for the PNP configurations under standard test conditions.

Feature Summary

  • Dual configuration combining complementary NPN and PNP transistors in a compact footprint
  • High DC current gain suitable for low-current switching and amplification tasks
  • Wide operating temperature range supporting industrial and commercial environments

Applications

  • General-purpose signal switching circuits
  • Low-power amplifier stages
  • Logic interface buffers

Procurement Notes

Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm RoHS compliance status and specific tape-and-reel packaging details prior to procurement. Ensure the ordering suffix matches the required quantity format. Cross-reference datasheet revisions to confirm electrical parameter consistency against design specifications.

Selection Notes

Select this component when space-constrained designs require matched complementary transistor pairs. The SOT-963 package offers a smaller footprint compared to traditional dual-transistor packages. Verify that the 45 V voltage rating aligns with circuit requirements. Consider the 420 mW power dissipation limit for thermal management planning in dense PCB layouts.

Part Context

This part belongs to the NST847 series of dual BJT arrays from onsemi. It serves as a modern surface-mount alternative to legacy through-hole dual transistors. The series provides integrated NPN/PNP solutions for applications requiring minimal board space. It complements single-transistor variants like the NST847BF3T5G by offering complementary functionality in one package.

Replacement Considerations

The NST857BDP6T5G is a documented substitute part number featuring a similar SOT-963 dual configuration. Verify pinout compatibility and specific hFE binning differences before substitution. Other SOT-963 dual BJT arrays may serve as alternatives if electrical parameters meet circuit requirements.

NST847BDP6T5GNST847BDP6T5G
$0.36
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