NSV40301MDR2G

Description：TRANS 2NPN DUAL 40V 3A 8-SOIC
Series：-

SKU:d1770fec82cd Category: Bipolar Transistor Arrays Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS 2NPN DUAL 40V 3A 8-SOIC
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：2 NPN (Dual)
Current - Collector (Ic) (Max)：3A
Voltage - Collector Emitter Breakdown (Max)：40V
Vce Saturation (Max) @ Ib, Ic：115mV @ 200mA, 2A
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：180 @ 2A, 2V
Power - Max：653mW
Frequency - Transition：100MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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NSV40301MDR2G

Overview

The NSV40301MDR2G is a dual NPN bipolar junction transistor (BJT) array manufactured by onsemi. It features a maximum collector current of 3 A and a collector-emitter voltage rating of 40 V. The device is housed in an 8-SOIC surface-mount package with a power dissipation capability of 653 mW. It exhibits a transition frequency of 100 MHz and is designed for high-reliability applications, including automotive environments, as indicated by its qualification standards.

Feature Summary

Dual NPN configuration within a single compact package
Qualified for automotive reliability standards
Low power dissipation design suitable for space-constrained layouts

Applications

Automotive electronic control units
General-purpose switching circuits
Signal amplification stages

Procurement Notes

Verify the specific datasheet version and ordering suffix to ensure compatibility with required automotive qualification standards. Confirm that the 8-SOIC package dimensions align with the target PCB footprint. Cross-reference the manufacturer's latest documentation for any updates regarding lead times or material compliance declarations prior to finalizing procurement orders.

Selection Notes

Select this component when a matched pair of NPN transistors is required for differential or push-pull configurations. The 40 V rating limits suitability for low-voltage logic interfaces; higher voltage variants are necessary for power distribution tasks. Evaluate thermal management requirements carefully due to the limited 653 mW power dissipation capacity inherent to the small outline package.

Part Context

This part belongs to the NSS40301MZ4 series of low saturation voltage power BJTs. It provides a dual-transistor alternative to discrete components, reducing board space and assembly complexity. The device utilizes silicon technology and is intended for robust performance in demanding operational environments where consistent electrical characteristics between paired transistors are critical.