NSV60100DUW6T1G

NSV60100DUW6T1G

  • Description:DUAL TRANSISTOR PNP
  • Series:-

SKU:202b213e375a Category: Brand:

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Product Detailed Parameters

  • Description:DUAL TRANSISTOR PNP
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Transistor Type:-
  • Current - Collector (Ic) (Max):-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Power - Max:-
  • Frequency - Transition:-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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NSV60100DUW6T1G

Overview

The NSV60100DUW6T1G is a dual PNP bipolar junction transistor (BJT) manufactured by onsemi. It features a maximum collector-emitter voltage (VCEO) of -60 V and a collector-base voltage (VCBO) of -80 V. The device supports a continuous collector current of 2 A, with a peak DC collector current rating of 4 A. Key electrical characteristics include an emitter-base voltage (VEBO) of -7 V and a gain-bandwidth product (fT) of 100 MHz. The saturation voltage (VCE(sat)) is specified at 170 mV. Operating temperature ranges from -55°C to +150°C. Power dissipation is 357 mW. The component utilizes silicon technology and is housed in a SOT-563-6 surface-mount package.

Feature Summary

  • Dual PNP configuration for compact circuit integration
  • Low collector-emitter saturation voltage for efficient switching
  • High thermal stability with extended operating temperature range

Applications

  • General-purpose switching circuits
  • Power management modules
  • Signal amplification stages

Procurement Notes

Verify the specific datasheet version and RoHS compliance status directly with onsemi or authorized distributors before procurement. Ensure that the SOT-563-6 package dimensions align with your PCB footprint requirements. Confirm that the thermal performance specifications meet the system's heat dissipation needs under maximum load conditions. Cross-reference the part number to avoid confusion with similar single-transistor variants.

Selection Notes

Select this component when a dual PNP configuration is required within a limited board space. The low saturation voltage makes it suitable for applications demanding high efficiency. Consider the 100 MHz bandwidth for moderate-speed signal processing tasks. Ensure the -60 V voltage rating exceeds the maximum circuit operating voltage to maintain reliability.

Part Context

This device belongs to onsemi's general-purpose BJT lineup, designed for robust performance in consumer and industrial electronics. The EMX series typically focuses on small-signal applications requiring reliable switching and amplification. The dual configuration reduces component count compared to using two discrete transistors.

Replacement Considerations

Direct substitutes may include other dual PNP transistors in SOT-563 packages with comparable voltage and current ratings, such as the NSV60100DUW4T1G. Verify pinout compatibility and electrical parameters before substitution.

NSV60100DUW6T1GNSV60100DUW6T1G

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