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The NSV60100DUW6T1G is a dual PNP bipolar junction transistor (BJT) manufactured by onsemi. It features a maximum collector-emitter voltage (VCEO) of -60 V and a collector-base voltage (VCBO) of -80 V. The device supports a continuous collector current of 2 A, with a peak DC collector current rating of 4 A. Key electrical characteristics include an emitter-base voltage (VEBO) of -7 V and a gain-bandwidth product (fT) of 100 MHz. The saturation voltage (VCE(sat)) is specified at 170 mV. Operating temperature ranges from -55°C to +150°C. Power dissipation is 357 mW. The component utilizes silicon technology and is housed in a SOT-563-6 surface-mount package.
Verify the specific datasheet version and RoHS compliance status directly with onsemi or authorized distributors before procurement. Ensure that the SOT-563-6 package dimensions align with your PCB footprint requirements. Confirm that the thermal performance specifications meet the system's heat dissipation needs under maximum load conditions. Cross-reference the part number to avoid confusion with similar single-transistor variants.
Select this component when a dual PNP configuration is required within a limited board space. The low saturation voltage makes it suitable for applications demanding high efficiency. Consider the 100 MHz bandwidth for moderate-speed signal processing tasks. Ensure the -60 V voltage rating exceeds the maximum circuit operating voltage to maintain reliability.
This device belongs to onsemi's general-purpose BJT lineup, designed for robust performance in consumer and industrial electronics. The EMX series typically focuses on small-signal applications requiring reliable switching and amplification. The dual configuration reduces component count compared to using two discrete transistors.
Direct substitutes may include other dual PNP transistors in SOT-563 packages with comparable voltage and current ratings, such as the NSV60100DUW4T1G. Verify pinout compatibility and electrical parameters before substitution.