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The NSV60101DMR6T1G is a dual NPN bipolar junction transistor (BJT) manufactured by onsemi. It features a maximum collector-emitter voltage of 60 V and a continuous collector current rating of 1 A. The device operates within a temperature range of -55 °C to +150 °C. Key electrical parameters include a collector-base voltage of 60 V, an emitter-base voltage of 6 V, and a saturation voltage of 130 mV at specified currents. Power dissipation is rated at 2.27 W, with a transition frequency of 180 MHz. The component utilizes silicon technology and is supplied in a surface-mount package.
Verify the specific suffix 'MR6' against official datasheets to confirm tape-and-reel packaging specifications. Ensure compatibility with RoHS directives if required by the target assembly process. Cross-reference the part number with manufacturer documentation to validate pinout assignments and thermal characteristics before finalizing procurement orders.
Select this component when a dual NPN topology is required within a single package to save board space. The 60 V rating suits low-to-medium voltage logic interfaces. Verify that the 1 A current capability meets load requirements. Consider the 2.27 W power dissipation limit and ensure adequate thermal management is designed into the PCB layout for sustained operation.
This part belongs to the NSS60101DMT series of dual transistors from onsemi. It serves as a discrete solution for replacing two individual NPN transistors in designs where space is constrained. The series is characterized by low saturation voltages and high current gain, making it suitable for modern low-power digital and analog switching applications.
Check for direct substitutes such as the NSS60101DMT variant. Verify pinout compatibility and electrical parameter equivalence before substitution. Consult manufacturer cross-reference lists for approved alternatives.