NSV60101DMR6T2G

NSV60101DMR6T2G

$0.54
  • Description:TRANS 2NPN DUAL 60V 1A SC-74
  • Series:-

SKU:179097072fec Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN DUAL 60V 1A SC-74
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN (Dual)
  • Current - Collector (Ic) (Max):1A
  • Voltage - Collector Emitter Breakdown (Max):60V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 50mA, 1A
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 100mA, 5V
  • Power - Max:400mW
  • Frequency - Transition:200MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-74, SOT-457
  • Supplier Device Package:SC-74
  • Grade:Automotive
  • Qualification:AEC-Q101

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NSV60101DMR6T2G

Overview

The NSV60101DMR6T2G is a single NPN bipolar junction transistor manufactured by onsemi. It features a maximum collector-emitter voltage of 60 V and a continuous collector current rating of 1 A. The device exhibits a low collector-emitter saturation voltage of 130 mV at specified currents, supporting efficient switching operations. Key electrical parameters include a collector-base voltage of 60 V, an emitter-base voltage of 6 V, and a power dissipation capacity of 2.27 W. The transition frequency (fT) is rated at 180 MHz, indicating suitability for high-speed applications. The component operates within a temperature range of -55°C to +150°C and utilizes silicon technology in an SMD/SMT package configuration.

Feature Summary

  • Low collector-emitter saturation voltage for improved efficiency
  • High transition frequency for fast switching performance
  • Extended operating temperature range for robust reliability

Applications

  • General-purpose switching circuits
  • Driver stages for loads requiring moderate current
  • Signal processing applications

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives and check for any automotive qualification markings if required for the target application. Cross-reference the part number with the latest datasheet revision to confirm pinout and thermal characteristics match design requirements.

Selection Notes

Select this component when a single NPN transistor with 60 V breakdown and 1 A current handling is required. Consider the low VCE(sat) for minimizing conduction losses in switching applications. Verify that the 2.27 W power dissipation rating aligns with the thermal management strategy of the final assembly. Compare fT specifications against signal frequency requirements to ensure adequate bandwidth.

Part Context

This part belongs to the NSS60101DMT series of low VCE(sat) transistors from onsemi. These devices are designed for general-purpose use where low saturation voltage and high speed are critical. The series typically includes variants with different packaging options to suit various manufacturing needs while maintaining consistent electrical performance characteristics across the family.

Replacement Considerations

Consult official substitution guides for equivalent NPN transistors with matching 60 V, 1 A ratings and similar VCE(sat) values. Verify pin compatibility and thermal resistance parameters before replacing. No direct public substitute part numbers are confirmed in available data.

NSV60101DMR6T2GNSV60101DMR6T2G
$0.54
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