NSVBA114EMXWTBG

NSVBA114EMXWTBG

  • Description:BIAS RESISTOR TRANSISTORS (BRT)
  • Series:NSBAMXW

SKU:c7fc46b1299f Category: Brand:

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Product Detailed Parameters

  • Description:BIAS RESISTOR TRANSISTORS (BRT)
  • Series:NSBAMXW
  • Mfr:onsemi
  • Package:Bulk
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:450 mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount, Wettable Flank
  • Package / Case:3-XFDFN
  • Supplier Device Package:3-XDFNW (1x1)

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NSVBA114EMXWTBG

Overview

The NSVBA114EMXWTBG is a PNP pre-biased transistor manufactured by onsemi, designed for surface-mount applications. It integrates a single NPN or PNP bipolar junction transistor with built-in biasing resistors to simplify circuit design and reduce component count. The device features a collector-emitter voltage rating of 50 V and a continuous collector current capacity of 500 mA. Internal resistance values are typically 10 kOhms for both the base resistor (R1) and emitter resistor (R2). The unit operates within a temperature range of -55°C to +150°C and is housed in an SOT-363 package.

Feature Summary

  • Integrates dual resistors with a single transistor to minimize printed circuit board space and assembly complexity
  • Engineered for high-speed switching operations with optimized transition frequency characteristics
  • Provides consistent DC current gain performance across specified operating conditions

Applications

  • General-purpose switching circuits in consumer electronics
  • Driver stages for low-power loads in industrial control systems
  • Logic level translation interfaces between microcontrollers and peripheral devices

Procurement Notes

Verify the complete part number against official manufacturer documentation to ensure correct suffix identification. Confirm that the specific ordering code matches the required packaging format and tape-and-reel specifications. Cross-reference the date code and lot traceability requirements with your quality assurance standards before finalizing procurement orders.

Selection Notes

Select this component when a compact solution for PNP switching is required without external biasing networks. Ensure the application voltage does not exceed the 50 V collector-emitter breakdown limit. Verify that the load current remains within the 500 mA continuous rating to maintain thermal stability and device longevity under expected operating conditions.

Part Context

This component belongs to the BAV114 series of pre-biased transistors offered by onsemi. These devices are part of a broader family of resistor-equipped transistors designed to replace discrete resistor-transistor combinations. The series provides standardized electrical characteristics suitable for mass production in various electronic assemblies requiring reliable switching performance.

Replacement Considerations

Consult official substitution guides for compatible equivalents such as the BAV114 or PDTB114 variants. Verify pinout compatibility and electrical parameter alignment before implementing any alternative components in existing designs.

NSVBA114EMXWTBGNSVBA114EMXWTBG

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