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The NSVBA123YMXWTBG is a single PNP digital transistor from the onsemi NSBAMXW series, housed in an XDFNW3 (DFN-3) surface-mount package. It features a typical input resistance of 2.2 kOhms and a resistor ratio of 0.22. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Power dissipation is rated at 450 mW, with an operating temperature range spanning from -65 C to +150 C. The minimum DC collector/base gain (hfe) is specified as 35 at -5 mA and -10 V.
Verify the specific ordering suffix against official manufacturer documentation to confirm exact reel specifications and tape-and-reel dimensions. Ensure that the requested part number matches the precise electrical characteristics required for the target application. Cross-reference the manufacturer's latest datasheet to validate RoHS compliance status and any recent design changes or lifecycle notifications before finalizing procurement orders.
Select this component when a PNP digital transistor with a 50 V rating and 100 mA current capacity is required. The 2.2 kOhm input resistance suits standard logic drive levels. Consider the DFN-3 package constraints for thermal management and board space. Verify that the -65 C to +150 C operating range meets the environmental demands of the intended deployment scenario.
This component belongs to the NSBAMXW series of digital transistors from onsemi. These devices combine bipolar transistors with monolithic resistors to provide simplified switching solutions. The series offers various configurations and packages to accommodate different power and space requirements in modern electronic designs.
Consult official substitution guides for compatible parts within the same family or equivalent specifications from other manufacturers. Verify pinout compatibility and electrical parameter margins before implementing any alternative components in existing designs.