NSVBA123YMXWTBG

NSVBA123YMXWTBG

  • Description:BIAS RESISTOR TRANSISTORS (BRT)
  • Series:NSBAMXW

SKU:9553955fc622 Category: Brand:

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Product Detailed Parameters

  • Description:BIAS RESISTOR TRANSISTORS (BRT)
  • Series:NSBAMXW
  • Mfr:onsemi
  • Package:Bulk
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):2.2 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:450 mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount, Wettable Flank
  • Package / Case:3-XFDFN
  • Supplier Device Package:3-XDFNW (1x1)

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NSVBA123YMXWTBG

Overview

The NSVBA123YMXWTBG is a single PNP digital transistor from the onsemi NSBAMXW series, housed in an XDFNW3 (DFN-3) surface-mount package. It features a typical input resistance of 2.2 kOhms and a resistor ratio of 0.22. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Power dissipation is rated at 450 mW, with an operating temperature range spanning from -65 C to +150 C. The minimum DC collector/base gain (hfe) is specified as 35 at -5 mA and -10 V.

Feature Summary

  • Integrates internal biasing resistors to simplify circuit design and reduce component count.
  • Utilizes a compact DFN-3 footprint for efficient space-constrained PCB layouts.
  • Engineered for high thermal stability with an extended junction temperature capability.

Applications

  • General-purpose switching applications in consumer electronics.
  • Driver circuits for low-power loads requiring integrated base control.
  • Logic interface stages between microcontrollers and peripheral devices.

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm exact reel specifications and tape-and-reel dimensions. Ensure that the requested part number matches the precise electrical characteristics required for the target application. Cross-reference the manufacturer's latest datasheet to validate RoHS compliance status and any recent design changes or lifecycle notifications before finalizing procurement orders.

Selection Notes

Select this component when a PNP digital transistor with a 50 V rating and 100 mA current capacity is required. The 2.2 kOhm input resistance suits standard logic drive levels. Consider the DFN-3 package constraints for thermal management and board space. Verify that the -65 C to +150 C operating range meets the environmental demands of the intended deployment scenario.

Part Context

This component belongs to the NSBAMXW series of digital transistors from onsemi. These devices combine bipolar transistors with monolithic resistors to provide simplified switching solutions. The series offers various configurations and packages to accommodate different power and space requirements in modern electronic designs.

Replacement Considerations

Consult official substitution guides for compatible parts within the same family or equivalent specifications from other manufacturers. Verify pinout compatibility and electrical parameter margins before implementing any alternative components in existing designs.

NSVBA123YMXWTBGNSVBA123YMXWTBG

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