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Product Detailed Parameters
- Description：BIAS RESISTOR TRANSISTORS (BRT)
- Series：NSBAMXW
- Mfr：onsemi
- Package：Bulk
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：47 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：450 mW
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Package / Case：3-XFDFN
- Supplier Device Package：3-XDFNW (1x1)
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Overview
The NSVBA144EMXWTBG is a single PNP Bias Resistor Transistor (BRT) from the NSBAMXW series, manufactured by onsemi. It features a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device has a typical input resistance of 10 kOhms with a resistor ratio of 1. Minimum DC current gain (hfe) is specified as 80 at -5 mA and -10 V. Power dissipation is rated at 450 mW. It operates within a temperature range of -65 C to +150 C and is housed in a DFN-3 (XDFNW3) surface-mount package.
Feature Summary
- Integrates a PNP transistor with an internal bias network to simplify circuit design.
- Provides high current gain for efficient switching applications.
- Utilizes a compact DFN-3 package suitable for space-constrained designs.
Applications
- General purpose switching circuits
- Driver stages for power transistors or MOSFETs
- Logic level translation interfaces
Procurement Notes
Verify the exact part number against official onsemi documentation to ensure compatibility with specific application requirements. Confirm that the DFN-3 package dimensions align with PCB layout constraints. Check for any recent updates to the datasheet regarding thermal characteristics or electrical limits. Ensure sourcing channels provide genuine components with traceable manufacturing history to maintain reliability standards.
Selection Notes
Select this component when a pre-biased PNP solution is required to reduce external component count. The 10 kOhm input resistance offers a standard balance between drive current and speed. Consider the 50 V voltage rating and 100 mA current capability to ensure adequate headroom for the intended load. The wide operating temperature range supports use in demanding industrial environments.
Part Context
This device belongs to the NSBAMXW family of Bias Resistor Transistors designed to replace discrete transistor-resistor networks. These components are engineered to minimize board space and assembly time while maintaining consistent electrical performance. The XDFNW3 package provides a small footprint ideal for modern portable and compact electronic devices.
Replacement Considerations
NSBC144EMXWTBG is a similar NPN variant within the same series but differs in polarity. NSBA114EMXWTBG is another PNP option with different input resistance characteristics. Verify pinout and electrical parameters before substituting with other BRT models.
