NSVBAS21TMR6T1G

NSVBAS21TMR6T1G

$0.20
  • Description:DIODE ARRAY GP 250V 200MA SC-74
  • Series:-

SKU:7cc70edf9afc Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE ARRAY GP 250V 200MA SC-74
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Configuration:3 Independent
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):250 V
  • Current - Average Rectified (Io) (per Diode):200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
  • Speed:Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr):50 ns
  • Current - Reverse Leakage @ Vr:100 nA @ 200 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Surface Mount
  • Package / Case:SC-74, SOT-457
  • Supplier Device Package:SC-74
  • Grade:-
  • Qualification:-

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NSVBAS21TMR6T1G

Overview

The NSVBAS21TMR6T1G is a triple high-voltage switching diode array manufactured by onsemi. It integrates three independent rectifier diodes within a single SC-74 (SOT-363) surface-mount package, designated as Case 318F-05. The device utilizes silicon planar technology and features a common cathode configuration for each internal element. Key electrical characteristics include a maximum repetitive peak reverse voltage of 250 V and a continuous forward current rating of 200 mA per diode. The component exhibits a low maximum forward voltage drop of 1 V at specified current levels, ensuring efficient signal switching with minimal power loss in compact electronic designs.

Feature Summary

  • Integrates three independent high-voltage switching diodes into a single compact surface-mount package to minimize board space.
  • Features a common cathode configuration for each internal element, simplifying circuit layout and connection requirements.
  • Utilizes silicon planar technology designed for robust performance in general-purpose switching applications.
  • Provides high voltage isolation capabilities suitable for protecting sensitive circuits from transient reverse voltages.

Applications

  • General-purpose signal switching in consumer electronics
  • Voltage clamping and protection in data lines
  • Logic level shifting circuits requiring high reverse voltage tolerance

Procurement Notes

Verify the specific suffix TMR6 against the manufacturer's latest datasheet to confirm tape and reel specifications and packaging orientation. Ensure compatibility with standard SMT assembly processes for the SC-74 footprint. Cross-reference the Case 318F-05 mechanical drawing for precise pad dimensions and thermal requirements during PCB design validation.

Selection Notes

Select this component when space constraints require multiple switching diodes in a single package. The 250 V reverse voltage rating makes it suitable for higher voltage logic interfaces compared to standard 50 V or 100 V alternatives. Consider the 200 mA current rating to ensure adequate headroom for the intended switching loads without exceeding thermal limits.

Part Context

This part belongs to the BAS2x series of triple diode arrays from onsemi, designed for high-density packaging. The NSV prefix indicates a specific manufacturing line or quality tier within the company's discrete semiconductor portfolio. The SC-74 package is widely used in portable devices where volume reduction is critical for maintaining small form factors in modern electronics.

Replacement Considerations

Direct pin-compatible substitutes may include other triple diode arrays in SC-74 packages with similar voltage and current ratings, such as the BAS21W or BAS22W series, provided their electrical parameters meet the application requirements. Verify package outline dimensions and internal configuration before substitution.

NSVBAS21TMR6T1GNSVBAS21TMR6T1G
$0.20
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