SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The NSVBAV23CLT1G is a small signal switching diode manufactured by onsemi, housed in an SOT-23-3 surface-mount package. It features a common cathode configuration with a peak reverse voltage of 250 V and a maximum forward current of 225 mA. The device exhibits a fast recovery time of 50 ns and a low reverse leakage current of 100 nA at 25°C. Operating within a temperature range of -65°C to +150°C, it supports automotive applications through AEC-Q101 qualification.
Verify the specific suffix LT1G against official manufacturer documentation to confirm packaging details and tape-and-reel specifications. Ensure the component meets AEC-Q101 requirements if deployed in automotive contexts. Cross-reference datasheet parameters such as thermal resistance and power dissipation limits during integration planning.
Select this component when high-voltage blocking capability up to 250 V is required alongside fast switching speeds. The common cathode arrangement simplifies circuit design for dual-diode functions. Consider the extended operating temperature range for harsh environment deployments where standard commercial grades may fail.
This part belongs to the BAV23C series of small signal switching diodes from onsemi. It shares functional similarities with other devices in the BAV family but offers specific electrical characteristics tailored for high-voltage switching tasks. The series is widely utilized in consumer electronics and industrial control systems.
Compatible substitutes include the BAV23C and BAV23CLT1G. Verify pinout compatibility and electrical parameter alignment before substitution to ensure circuit integrity.
The device is rated for a peak reverse voltage of 250 V.
Yes, it is qualified according to the AEC-Q101 standard.
The typical reverse recovery time is 50 ns.