NSVBC114EMXWTBG

NSVBC114EMXWTBG

  • Description:BIAS RESISTOR TRANSISTORS (BRT)
  • Series:NSBCMXW

SKU:b941bce5305a Category: Brand:

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Product Detailed Parameters

  • Description:BIAS RESISTOR TRANSISTORS (BRT)
  • Series:NSBCMXW
  • Mfr:onsemi
  • Package:Bulk
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:450 mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount, Wettable Flank
  • Package / Case:3-XFDFN
  • Supplier Device Package:3-XDFNW (1x1)

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NSVBC114EMXWTBG

Overview

The NSVBC114EMXWTBG is a single NPN digital transistor from the NSBCMXW series, manufactured by onsemi. It features an integrated base resistor with a typical value of 10 kOhms and a resistor ratio of 1. The device is housed in an XDFNW3 (DFN-3) surface-mount package. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current of 100 mA, and a power dissipation rating of 450 mW. It operates within a temperature range of -65°C to +150°C.

Feature Summary

  • Integrates a pre-biased NPN transistor with an internal base resistor for simplified circuit design.
  • Utilizes a compact XDFNW3 (DFN-3) surface-mount package suitable for space-constrained applications.
  • Designed for high thermal stability with an extended operating temperature range up to +150°C.

Applications

  • General-purpose switching circuits requiring compact form factors.
  • Level shifting interfaces between microcontrollers and peripheral devices.
  • Driver stages for low-current loads in consumer electronics.

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging configuration. Confirm RoHS compliance status through the latest product change notice or component material declaration. Cross-reference the full part number with authorized distributors to validate current production status and availability before finalizing procurement plans.

Selection Notes

Select this component when a single NPN digital transistor with a 10 kOhm base resistor is required in a DFN-3 package. Ensure the application voltage does not exceed 50 V and current requirements remain below 100 mA. Consider the 450 mW power dissipation limit and thermal management needs for the chosen PCB layout. Verify compatibility with the target operating temperature range of -65°C to +150°C.

Part Context

This part belongs to the NSBCMXW series of digital transistors from onsemi. These components integrate bias resistors directly onto the die to reduce external component count and board space. The NSVBC114EMXWTBG specifically denotes the single NPN variant in the XDFNW3 package, distinguishing it from dual configurations or other package types within the broader NSBC114 family.

Replacement Considerations

Direct substitutes may include other single NPN digital transistors in DFN-3 packages with similar 50V/100mA ratings and 10kOhm base resistance. Verify pinout compatibility and electrical parameters such as hFE and saturation voltage before substitution. Consult the manufacturer's cross-reference guide for officially recommended alternatives.

NSVBC114EMXWTBGNSVBC114EMXWTBG

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