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The NSVBC114EMXWTBG is a single NPN digital transistor from the NSBCMXW series, manufactured by onsemi. It features an integrated base resistor with a typical value of 10 kOhms and a resistor ratio of 1. The device is housed in an XDFNW3 (DFN-3) surface-mount package. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current of 100 mA, and a power dissipation rating of 450 mW. It operates within a temperature range of -65°C to +150°C.
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging configuration. Confirm RoHS compliance status through the latest product change notice or component material declaration. Cross-reference the full part number with authorized distributors to validate current production status and availability before finalizing procurement plans.
Select this component when a single NPN digital transistor with a 10 kOhm base resistor is required in a DFN-3 package. Ensure the application voltage does not exceed 50 V and current requirements remain below 100 mA. Consider the 450 mW power dissipation limit and thermal management needs for the chosen PCB layout. Verify compatibility with the target operating temperature range of -65°C to +150°C.
This part belongs to the NSBCMXW series of digital transistors from onsemi. These components integrate bias resistors directly onto the die to reduce external component count and board space. The NSVBC114EMXWTBG specifically denotes the single NPN variant in the XDFNW3 package, distinguishing it from dual configurations or other package types within the broader NSBC114 family.
Direct substitutes may include other single NPN digital transistors in DFN-3 packages with similar 50V/100mA ratings and 10kOhm base resistance. Verify pinout compatibility and electrical parameters such as hFE and saturation voltage before substitution. Consult the manufacturer's cross-reference guide for officially recommended alternatives.