NSVBC143XMXWTBG

NSVBC143XMXWTBG

  • Description:BIAS RESISTOR TRANSISTORS (BRT)
  • Series:NSBCMXW

SKU:85dd722ee21d Category: Brand:

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Product Detailed Parameters

  • Description:BIAS RESISTOR TRANSISTORS (BRT)
  • Series:NSBCMXW
  • Mfr:onsemi
  • Package:Bulk
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):4.7 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:450 mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount, Wettable Flank
  • Package / Case:3-XFDFN
  • Supplier Device Package:3-XDFNW (1x1)

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NSVBC143XMXWTBG

Overview

The NSVBC143XMXWTBG is a single NPN digital transistor from the onsemi NSBCMXW series, housed in an XDFNW3 (DFN-3) surface-mount package. It integrates internal biasing resistors to simplify circuit design and reduce component count. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device features a typical input resistance of 4.7 kOhms with a resistor ratio of 0.47. DC current gain (hFE) is specified at a minimum of 35 at 5 mA and 10 V. Power dissipation capability is rated at 450 mW, with an operating temperature range spanning from -65°C to +150°C.

Feature Summary

  • Integrated biasing network reduces external component requirements
  • High thermal stability with extended operating temperature range
  • Compact DFN-3 footprint suitable for space-constrained designs

Applications

  • General-purpose switching applications
  • Driver circuits for low-power loads
  • Logic level translation interfaces

Procurement Notes

Verify the exact ordering suffix against the manufacturer's latest datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or onsemi sales representatives prior to procurement. Ensure storage conditions align with moisture sensitivity levels defined in the manufacturing data.

Selection Notes

Select this component when a compact NPN digital transistor with 50V rating and 100mA current capacity is required. The 4.7kOhm input resistance suits standard logic drive levels. Compare power dissipation ratings and thermal resistance values against PCB copper area constraints. Verify that the XDFNW3 package dimensions fit within the designated board layout clearance.

Part Context

This part belongs to the onsemi NSBCMXW family of digital transistors designed for high-density surface-mount applications. The series offers various configurations and resistance values within small form-factor packages like DFN-3. These devices replace discrete resistor-transistor combinations, improving reliability and reducing assembly costs in consumer and industrial electronics.

Replacement Considerations

Check for direct pin-compatible substitutes within the same onsemi NSBCMXW series or equivalent offerings from other manufacturers such as ROHM or Panasonic. Ensure replacement parts match the 50V VCEO, 100mA IC, and 4.7kOhm Rin specifications. Verify package compatibility and thermal performance characteristics.

NSVBC143XMXWTBGNSVBC143XMXWTBG

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