NSVBC143ZMXWTBG

NSVBC143ZMXWTBG

  • Description:BIAS RESISTOR TRANSISTORS (BRT)
  • Series:NSBCMXW

SKU:694c1f4eb34f Category: Brand:

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Product Detailed Parameters

  • Description:BIAS RESISTOR TRANSISTORS (BRT)
  • Series:NSBCMXW
  • Mfr:onsemi
  • Package:Bulk
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):4.7 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:450 mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount, Wettable Flank
  • Package / Case:3-XFDFN
  • Supplier Device Package:3-XDFNW (1x1)

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NSVBC143ZMXWTBG

Overview

The NSVBC143ZMXWTBG is a single NPN digital transistor from the onsemi NSBCMXW series, housed in an XDFNW3 (DFN-3) surface-mount package. It features a typical input resistance of 4.7 kOhms and a resistor ratio of 0.1. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Power dissipation is rated at 450 mW, with a minimum DC current gain (hfe) of 80 at 5 mA and 10 V. Operating temperatures range from -65 C to +150 C.

Feature Summary

  • Integrated biasing resistors simplify circuit design by reducing component count.
  • High thermal stability allows operation up to 150 C junction temperature.
  • Compact DFN-3 package facilitates high-density PCB layouts.

Applications

  • General-purpose switching applications
  • Driver circuits for low-power loads
  • Logic level translation interfaces

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm exact packaging and tape-and-reel specifications. Ensure that the requested part number matches the precise electrical characteristics and RoHS compliance status required for the target application before finalizing procurement orders.

Selection Notes

Select this component when a compact NPN digital transistor with 50 V rating and 100 mA current capacity is required. The 4.7 kOhm input resistance suits standard logic drive levels. Verify that the XDFNW3 footprint aligns with the board layout constraints and thermal management requirements of the design.

Part Context

This part belongs to the onsemi NSBCMXW series of digital transistors. These devices combine NPN bipolar transistors with internal biasing networks. The series offers various configurations and packages to support diverse embedded control and signal processing needs in consumer and industrial electronics.

Replacement Considerations

Consult official cross-reference data for verified substitutes. Ensure any replacement maintains the same NPN polarity, 50 V VCEO rating, 100 mA current capability, and compatible DFN-3 or equivalent pinout configuration.

NSVBC143ZMXWTBGNSVBC143ZMXWTBG

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