SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The NSVDTA113EM3T5G is a pre-biased PNP bipolar junction transistor (BJT) manufactured by onsemi. It integrates internal base and emitter resistors, each valued at 1 kOhm, within a compact SOT-723 surface-mount package. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. With a power dissipation rating of 260 mW, it is designed for efficient switching applications. The component meets AEC-Q101 automotive qualification standards and complies with RoHS3 regulations, ensuring suitability for reliable electronic circuit implementations.
Verify the complete part number including the T5G suffix to ensure correct tape-and-reel packaging configuration. Confirm RoHS3 compliance status matches project requirements. Check for any recent PCN notifications regarding assembly or material changes. Ensure storage conditions adhere to moisture sensitivity level 1 guidelines prior to soldering.
Select this component when a PNP pre-biased transistor with 1 kOhm internal resistors is required. The 50 V rating suits low-voltage digital interfaces. The SOT-723 package offers a smaller footprint compared to traditional SOT-23 variants. Verify that the 100 mA current capability aligns with the specific load requirements of the target application circuit.
This part belongs to the DTA113 family of pre-biased transistors from onsemi. It shares functional similarities with other MUN and DTA series devices but differs in specific resistor values and package types. The NSV prefix indicates automotive-grade qualification, distinguishing it from standard commercial variants within the broader product line.
Direct substitutes include NSVDTA113EUTRKG and NSVDTA113EMURKG, which share identical electrical characteristics and pinouts. Alternative packages such as SOT-323 may require schematic adjustments due to pin configuration differences. Always verify thermal performance and resistance tolerances before substituting.