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The NSVDTA123JM3T5G is an NPN digital transistor manufactured by onsemi, belonging to the DTA123JM3 series. It integrates a single NPN bipolar junction transistor with built-in bias resistors in a compact SOT-723 surface-mount package. The device features a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Key electrical parameters include a minimum DC current gain (hFE) of 80 and a typical input resistance ratio of 1:47. Designed for general-purpose switching applications, it operates within a temperature range of -55°C to +150°C and holds AEC-Q101 qualification for automotive reliability.
Verify the specific ordering suffix against official onsemi documentation to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives and check for any recent product change notices that may affect pinout or electrical characteristics before finalizing procurement plans.
Select this component when a small-form-factor NPN digital switch with integrated biasing is required. The 50V rating and 100mA current capacity suit low-voltage logic interfaces. Confirm that the 1:47 resistor ratio meets the drive requirements of the target circuit compared to alternative ratios available in the same series.
This part is part of onsemi's broader portfolio of AEC-Q101 qualified digital transistors designed for robust performance in demanding environments. It serves as a direct replacement for standard discrete transistor-resistor networks, simplifying PCB layout and assembly processes while maintaining high reliability standards for automotive and industrial sectors.
Compatible substitutes include NSVDTC123JM3T5G (PNP polarity) and NSVDTB123JM3T5G (dual configuration). Verify polarity and internal resistor values match the original design requirements before substitution.