NSVDTA143ZET1G

NSVDTA143ZET1G

$0.16
  • Description:TRANS PREBIAS PNP 50V 0.1A SC75
  • Series:-

SKU:4dcb4a3ea2ad Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V 0.1A SC75
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):4.7 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:200 mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:SC-75, SOT-416
  • Supplier Device Package:SC-75, SOT-416

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NSVDTA143ZET1G

Overview

The NSVDTA143ZET1G is a Bias Resistor Transistor (BRT) manufactured by onsemi, featuring a single PNP bipolar junction transistor integrated with a monolithic bias network. The device includes two resistors: R1 (base resistor) of 4.7 kOhms and R2 (emitter resistor) of 47 kOhms. It supports a maximum collector current (Ic) of 100 mA and a collector-emitter breakdown voltage (Vceo) of 50 V. The DC current gain (hFE) is specified at a minimum of 80 when tested at Ic=5mA and Vce=10V. The saturation voltage (Vce(sat)) is maximized at 250 mV under conditions of Ib=300µA and Ic=10mA. The component has a maximum power dissipation of 260 mW and is housed in an SOT-723 surface-mount package.

Feature Summary

  • Integrates a single PNP transistor with dual bias resistors to replace discrete components
  • Designed for simplified circuit layouts by eliminating external biasing networks
  • Complies with AEC-Q101 automotive qualification standards

Applications

  • Automotive electronic systems requiring qualified digital transistors
  • General-purpose switching applications in consumer electronics
  • Interface circuits in industrial control equipment

Procurement Notes

Verify the specific suffix ET1G against official onsemi documentation to confirm pinout compatibility and manufacturing lot details. Ensure the procurement channel provides valid traceability records for AEC-Q101 certified parts. Cross-reference the full part number with the manufacturer's latest datasheet revision to confirm resistor values and electrical characteristics match design requirements before ordering.

Selection Notes

Select this component when a PNP digital transistor with a high emitter-to-base resistance ratio is required. The 4.7 kOhm base resistor and 47 kOhm emitter resistor provide specific biasing characteristics suitable for driving loads up to 100 mA. Consider the SOT-723 package size for space-constrained designs and verify thermal management capabilities for the 260 mW power dissipation limit in the target application environment.

Part Context

This part belongs to the DTA143 series of Bias Resistor Transistors from onsemi. It shares the same internal transistor structure and basic electrical ratings as other variants in the family, distinguished primarily by the specific resistor values and packaging options. The NSV prefix indicates a specific manufacturing or sourcing designation within the broader DTA143 product line.

Replacement Considerations

Compatible substitutes include DTA143ZM3T5G and DTA143ZET1G, which share identical electrical specifications and pin configurations. Verify that any replacement maintains the AEC-Q101 qualification if automotive reliability is required.

NSVDTA143ZET1GNSVDTA143ZET1G
$0.16
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