NSVDTA144WET1G

$0.16

Description：TRANS PREBIAS PNP 50V 0.1A SC75
Series：-

SKU:4979648a5668 Category: Single, Pre-Biased Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS PREBIAS PNP 50V 0.1A SC75
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Resistors Included：R1 and R2
Transistor Type：PNP - Pre-Biased
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：50 V
Resistor - Base (R1)：47 kOhms
Resistor - Emitter Base (R2)：22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic：250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)：500nA
Frequency - Transition：-
Power - Max：200 mW
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Package / Case：SC-75, SOT-416
Supplier Device Package：SC-75, SOT-416

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NSVDTA144WET1G

Overview

The NSVDTA144WET1G is a single PNP digital transistor (BRT) from onsemi, designed to replace discrete devices and external bias networks. It features a typical input resistance of 47 kOhms with a resistor ratio of 2.1. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and continuous collector current of 100 mA. Power dissipation is rated at 200 mW, with a minimum DC current gain (hfe) of 80. It operates within a temperature range of -55 C to +150 C and is housed in an SC-75-3 (SOT-416) surface-mount package.

Feature Summary

Integrates a PNP bipolar transistor with internal bias resistors to simplify circuit design
Provides high current gain for efficient switching applications
Supports wide operating temperature ranges for industrial reliability

Applications

General-purpose switching circuits
Driver stages for logic interfaces
Battery protection systems

Procurement Notes

Verify the specific suffix 'NSV' against the manufacturer's official documentation to confirm it denotes a valid variant or special ordering code distinct from the standard DTA144WET1G. Ensure that the component meets RoHS compliance requirements as specified in the official material composition declarations. Cross-reference the datasheet revision history to confirm electrical characteristics match the intended design specifications before finalizing procurement.

Selection Notes

Select this component when a compact solution is required for driving loads with limited base drive current. The integrated bias network reduces board space compared to discrete resistor-transistor combinations. Consider the 50 V voltage rating and 100 mA current limit to ensure adequate headroom for the target application. Verify thermal management capabilities given the 200 mW power dissipation rating in the SC-75 package.

Part Context

This part belongs to the DTA144WE series of pre-biased bipolar transistors. These devices are engineered to offer a cost-effective alternative to discrete BJT and resistor networks. The series is characterized by its small footprint and standardized electrical parameters, making it suitable for mass-produced consumer and industrial electronics where space efficiency and assembly simplicity are critical design constraints.