NSVDTC113EM3T5G

NSVDTC113EM3T5G

$0.24
  • Description:TRANS PREBIAS NPN 50V SOT723
  • Series:-

SKU:21da50baab0a Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V SOT723
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):1 kOhms
  • Resistor - Emitter Base (R2):1 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:3 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 5mA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:260 mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:SOT-723
  • Supplier Device Package:SOT-723

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NSVDTC113EM3T5G

Overview

The NSVDTC113EM3T5G is an NPN Bias Resistor Transistor (BRT) from onsemi, integrating a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. It operates with a maximum collector-emitter voltage of 50 Vdc and continuous collector current of 100 mAdc. The device features a typical input resistance R1 of 1 kOhms and a resistor ratio R1/R2 of 1. Packaged in SOT-723, it supports surface mount installation and functions within a junction temperature range of -55°C to +150°C.

Feature Summary

  • Integrates a single NPN transistor with a monolithic bias network comprising a series base resistor and a base-emitter resistor to replace discrete components.
  • AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
  • Designed to simplify circuit design while reducing board space and component count.

Applications

  • Automotive electronic systems requiring AEC-Q101 qualification
  • General-purpose switching applications utilizing built-in bias resistors
  • Circuit designs prioritizing reduced board space and simplified assembly

Procurement Notes

Verify the specific ordering suffix T5G corresponds to the required tape and reel packaging quantity of 8000 units. Confirm that the NSV prefix meets project requirements for automotive qualification and unique site control changes. Ensure compatibility with the SOT-723 package dimensions and pin configuration during procurement planning.

Selection Notes

Select this component when an NPN digital transistor with a 1 kOhm base resistor and unity resistor ratio is required. The SOT-723 package offers a compact footprint suitable for space-constrained layouts. Verify that the 50 V collector-emitter voltage rating aligns with the system's maximum operating voltage and that the 100 mA continuous current capability meets load requirements.

Part Context

This part belongs to the DTC113E/D series of digital transistors manufactured by onsemi. It shares electrical characteristics and internal architecture with related devices such as DTC113EM3T5G and MUN2230, differing primarily in packaging and specific qualification prefixes. The NSV prefix indicates compliance with automotive quality standards.

Replacement Considerations

DTC113EM3T5G is a verified substitute within the same series offering identical electrical specifications and SOT-723 packaging. Verify that any replacement maintains the required AEC-Q101 qualification if automotive application constraints apply.

NSVDTC113EM3T5GNSVDTC113EM3T5G
$0.24
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