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The NSVDTC113EM3T5G is an NPN Bias Resistor Transistor (BRT) from onsemi, integrating a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. It operates with a maximum collector-emitter voltage of 50 Vdc and continuous collector current of 100 mAdc. The device features a typical input resistance R1 of 1 kOhms and a resistor ratio R1/R2 of 1. Packaged in SOT-723, it supports surface mount installation and functions within a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix T5G corresponds to the required tape and reel packaging quantity of 8000 units. Confirm that the NSV prefix meets project requirements for automotive qualification and unique site control changes. Ensure compatibility with the SOT-723 package dimensions and pin configuration during procurement planning.
Select this component when an NPN digital transistor with a 1 kOhm base resistor and unity resistor ratio is required. The SOT-723 package offers a compact footprint suitable for space-constrained layouts. Verify that the 50 V collector-emitter voltage rating aligns with the system's maximum operating voltage and that the 100 mA continuous current capability meets load requirements.
This part belongs to the DTC113E/D series of digital transistors manufactured by onsemi. It shares electrical characteristics and internal architecture with related devices such as DTC113EM3T5G and MUN2230, differing primarily in packaging and specific qualification prefixes. The NSV prefix indicates compliance with automotive quality standards.
DTC113EM3T5G is a verified substitute within the same series offering identical electrical specifications and SOT-723 packaging. Verify that any replacement maintains the required AEC-Q101 qualification if automotive application constraints apply.