SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The NSVDTC114YM3T5G is a single NPN Digital Transistor with Built-in Resistors (BRT) manufactured by onsemi. It integrates biasing resistors to simplify circuit design, eliminating the need for external components. The device features a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. It operates within a temperature range of -55°C to +150°C and dissipates up to 260 mW. Packaged in an SOT-23-3 surface-mount format, it offers a typical input resistance of 10 kOhms and a DC current gain (hFE) ranging from 160 to 350.
Verify the exact part number against official onsemi documentation, as standard listings often reference DTC114TM3T5G or similar variants. Confirm package type and electrical ratings match system requirements before ordering. Ensure compliance with RoHS directives if applicable to the target market.
Select this component when a compact NPN switch with integrated base drive is required. Compare hFE ranges and power dissipation limits against load requirements. Verify that the SOT-23-3 footprint fits the PCB layout constraints and thermal management strategy.
This part belongs to the DTC series of digital transistors, which combine a transistor and resistors in one package. It serves as a drop-in replacement for discrete resistor-transistor networks, offering improved reliability and reduced assembly time in consumer and industrial electronics.
Check for direct equivalents such as DTC114TM3T5G or DTA114YM3T5G (PNP complement). Verify pinout compatibility and electrical parameters like VCEO and IC before substitution.