NSVDTC123EM3T5G

NSVDTC123EM3T5G

$0.24
  • Description:TRANS PREBIAS NPN 50V SOT723
  • Series:-

SKU:4e6d9815d30b Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V SOT723
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):2.2 kOhms
  • Resistor - Emitter Base (R2):2.2 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:8 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 5mA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:260 mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:SOT-723
  • Supplier Device Package:SOT-723

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NSVDTC123EM3T5G

Overview

The NSVDTC123EM3T5G is an NPN pre-biased transistor manufactured by onsemi, housed in a surface-mount SOT-723 package. It integrates a single transistor with a monolithic bias resistor network comprising R1 and R2, both specified at 2.2 kOhms. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Power dissipation is rated at 260 mW, with a minimum DC current gain (hFE) of 8 at 5 mA and 10 V. The saturation voltage is maximized at 250 mV under specific test conditions, and the collector cutoff current is limited to 500 nA.

Feature Summary

  • Integrates a single NPN transistor with a monolithic bias resistor network to replace discrete components
  • Automotive-grade qualification compliant with AEC-Q101 standards
  • Designed to simplify circuit design and reduce board space requirements

Applications

  • Automotive electronic systems requiring unique site and control change documentation
  • General-purpose switching applications utilizing pre-biased logic interfaces
  • Embedded controller input buffering where component count reduction is prioritized

Procurement Notes

Verify that the ordering suffix includes the 'NSV' prefix to ensure compliance with automotive-specific site and control change requirements. Confirm AEC-Q101 qualification status and PPAP capability during sourcing. Ensure the selected variant matches the required 2.2 kOhm resistor configuration for the target application design.

Selection Notes

Select this component when automotive reliability standards are mandatory for digital transistor applications. The integrated 2.2 kOhm base and emitter resistors eliminate external biasing networks. Verify that the 50 V breakdown voltage and 100 mA current rating align with the system's electrical constraints before finalizing the bill of materials.

Part Context

This part belongs to the DTC123 series of Bias Resistor Transistors. The NSV prefix distinguishes it as an automotive-grade variant subject to stricter manufacturing controls compared to standard commercial versions. It shares the same electrical characteristics as the DTC123EM3T5G but carries additional qualification certifications for automotive supply chains.

Replacement Considerations

The DTC123EM3T5G serves as a functional equivalent with identical electrical specifications. However, substitution requires verification of automotive qualification requirements, as the standard version lacks the NSV prefix and associated PPAP documentation.

NSVDTC123EM3T5GNSVDTC123EM3T5G
$0.24
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