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The NSVDTC123JM3T5G is a single NPN biased resistor transistor (BRT) manufactured by onsemi. It integrates an NPN bipolar junction transistor with internal base and emitter resistors within a compact SOT-723 surface-mount package. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA, with a power dissipation rating of 260 mW. It features a typical input resistance ratio of 1:1 and operates across a temperature range from -55°C to +150°C. This component is AEC-Q101 qualified for automotive applications.
Verify the specific suffix JM3 against official datasheets to confirm resistor values and automotive qualification status. Ensure compatibility with RoHS3 and REACH regulations. Confirm availability through authorized distributors as lead times may vary. Validate package dimensions against PCB layout requirements before finalizing procurement decisions.
Select this component when a single NPN BRT with integrated biasing is required for space-constrained designs. The 50V rating and 100mA current capacity suit general-purpose switching tasks. Consider the SOT-723 package size for high-density layouts. Verify thermal management needs given the 260mW power dissipation limit in enclosed spaces.
This part belongs to the DTC123 series of pre-biased transistors from onsemi. The NSV prefix indicates automotive-grade qualification under AEC-Q101 standards. The EM3 variant typically denotes standard resistor values, while JM3 specifies particular resistance configurations within the same functional family. These devices replace discrete resistor-transistor combinations in digital switching applications.
Direct substitutes include DTC123EM3T5G and NSVDTC123EM3T5G, though resistor values may differ. Verify pinout compatibility and electrical parameters before substitution. Alternative packages like SOD-523 offer similar functionality but require layout adjustments.