SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The NSVDTC143ZET1G is an NPN Bias Resistor Transistor (BRT) featuring a monolithic bias network with a series base resistor of 4.7 kΩ and a base-emitter resistor of 47 kΩ. It provides a maximum collector-emitter voltage of 50 Vdc and continuous collector current of 100 mAdc. The device operates within a junction temperature range of -55°C to +150°C and is housed in the SC-75 package.
Verify that the specific ordering suffix matches the required automotive qualification standards. Confirm the package type corresponds to the intended PCB layout constraints. Ensure compliance with Pb-Free and RoHS directives as specified in the ordering information table.
Select this component when a compact NPN digital transistor solution is needed for low-current switching applications. The integrated 4.7 kΩ and 47 kΩ resistors simplify circuit design by eliminating external biasing components. Verify thermal dissipation requirements against the derating curves provided in the datasheet.
This part belongs to the DTC143Z family of digital transistors manufactured by onsemi. It shares functional characteristics with related parts such as DTC143ZE and MUN2233, differing primarily in packaging and specific qualification prefixes like NSV for automotive use.
Direct substitutes include DTC143ZE and MUN2233T1G. Verify pinout compatibility and electrical ratings before substitution. Alternative packages such as SOT-23 or SC-59 may require schematic adjustments.