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The NSVDTC144WET1G is an NPN Bias Resistor Transistor (BRT) featuring a monolithic bias network with R1 = 47 kΩ and R2 = 22 kΩ. It operates within a collector-emitter voltage range of 50 Vdc and supports continuous collector currents up to 100 mAdc. The device includes input forward and reverse voltages rated at 40 Vdc and 10 Vdc, respectively. Electrical characteristics specify a DC current gain (hFE) of 80 to 140 at IC = 5.0 mA and VCE = 10 V. The component is housed in the SC-75 package (Case 463), which measures 1.60 x 0.80 x 0.80 mm with a 1.00 mm pitch.
Verify that the specific order contains the NSV prefix to ensure compliance with automotive site and control change requirements. Confirm AEC-Q101 qualification status and PPAP capability directly with the manufacturer or authorized distributor prior to finalizing procurement specifications for automotive integration.
Select this component when a compact NPN digital transistor solution is required for automotive environments. Ensure the application demands the specific 47 kΩ/22 kΩ resistor ratio and 50 V collector-emitter rating. Verify that the SC-75 package dimensions fit the available PCB real estate constraints.
This part belongs to the DTC144W series of digital transistors manufactured by onsemi. It is functionally equivalent to other devices in the family such as DTC144WE and DTC144WM3, differing primarily in packaging and specific automotive qualification prefixes. The series is designed to simplify circuit design by integrating bias resistors directly with the transistor die.
Direct replacements include DTC144WE and DTC144WM3, provided the package type matches the design requirements. For non-automotive applications, standard DTC144W variants may be suitable if AEC-Q101 qualification is not mandatory.