ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS 2PNP 60V 100MA SOT-563
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Transistor Type：2 PNP (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：60V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：500pA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 1mA, 6V
- Power - Max：500mW
- Frequency - Transition：140MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
Download product information
Overview
The NSVEMT1DXV6T5G is a dual general-purpose PNP transistor manufactured by onsemi, housed in an SOT-563 surface-mount package. It features a collector-emitter voltage (VCEO) of -60 V and a continuous collector current of -100 mA. The device has a maximum power dissipation of 357 mW at 25°C with one junction heated, or 500 mW with both junctions heated. Electrical characteristics include a DC current gain (hFE) ranging from 120 to 560, a transition frequency (fT) typical of 140 MHz, and a collector-emitter saturation voltage (VCE(sat)) of -0.5 V max. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Dual PNP configuration designed for general-purpose amplifier applications
- AEC-Q101 qualified and PPAP capable for automotive requirements
- Low collector-emitter saturation voltage for efficient switching
- Lead-free solder plating and RoHS compliant construction
Applications
- General purpose amplifier circuits
- Automotive electronic systems requiring unique site control
- Low power surface mount applications
Procurement Notes
Verify the specific ordering suffix 'T5G' against official documentation to confirm packaging quantity and availability status. Check for discontinuation notices as some variants in this series have been marked discontinued. Ensure compliance with AEC-Q101 qualification if used in automotive contexts. Confirm RoHS and halogen-free status matches project requirements.
Selection Notes
Select this component for designs requiring a compact dual PNP solution in an SOT-563 footprint. Consider the -60 V rating and -100 mA current limit for appropriate load handling. Evaluate thermal dissipation constraints given the 357 mW limit. Verify that the hFE range of 120 to 560 meets the gain requirements of the target circuit application.
Part Context
This part belongs to the EMT1DXV6 series of dual general-purpose transistors. It shares the same electrical specifications and package type as other variants like the T1G reel version, differing primarily in shipping quantity and prefix designation. The NSV prefix indicates automotive qualification and specific manufacturing site controls.
Replacement Considerations
Check for direct substitutes within the EMT1DXV6 family such as EMT1DXV6T1G. Verify pinout compatibility and electrical ratings match exactly before substitution. Consult official replacement guides for any discontinued variants.
