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The NSVF4017SG4T1G is an NPN silicon RF bipolar junction transistor manufactured by onsemi. It is housed in a compact SC-82FL (MCPH4) surface-mount package with four pins and dimensions of 2 x 1.6 x 0.85 mm. The device supports a maximum DC collector current of 100 mA and a maximum collector-emitter voltage of 12 V, with a collector-base voltage rating of 20 V and an emitter-base voltage of 2 V. It features a transition frequency of 10 GHz and a maximum power dissipation of 450 mW. The component operates within a temperature range of -55 °C to +150 °C and holds AEC-Q101 automotive qualification.
Verify the specific ordering suffix to ensure correct tape-and-reel quantities and handling specifications. Confirm that the component meets RoHS3 compliance requirements for your manufacturing process. Check for any recent Product Change Notices regarding material or assembly updates. Ensure storage conditions align with the specified moisture sensitivity level to prevent package damage during soldering.
Select this component when a small-form-factor NPN transistor with 10 GHz performance is required for automotive RF designs. Compare the 12 V collector-emitter voltage and 100 mA current limits against circuit demands. Consider the 450 mW power dissipation capability for thermal management planning. Verify compatibility with the SC-82FL footprint if replacing existing designs.
This part belongs to the NSVF4017 series of RF bipolar transistors from onsemi. It is specifically engineered for high-frequency applications in the automotive sector. The SC-82FL package provides a compact solution for modern electronic assemblies. The series emphasizes reliability through automotive qualification standards.
The NSVF4015SG4T1G is listed as a manufacturer-recommended substitute. Verify electrical parameter compatibility before implementation. No other public substitutes are confirmed in the provided documentation.