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The NSVF5501SKT3G is an NPN silicon RF bipolar transistor manufactured by onsemi, designed for high-frequency applications up to 5.5 GHz. It features a maximum collector-emitter voltage (VCEO) of 10 V and a continuous collector current of 70 mA. The device offers a minimum DC current gain (hFE) of 100 and operates within a temperature range of -55 °C to +150 °C. Packaged in a compact SOT-623-3 surface-mount format, it dissipates up to 250 mW of power. This component holds AEC-Q101 qualification, ensuring reliability for automotive environments.
Verify end-of-life status before integration, as the manufacturer has indicated this component is scheduled for obsolescence. Confirm final availability through authorized distributors or direct manufacturer channels, as stock levels may be limited. Ensure that any replacement strategies account for potential supply chain disruptions associated with discontinued parts.
Select this component when a small-form-factor NPN transistor is required for frequencies up to 5.5 GHz with moderate current handling capabilities. The AEC-Q101 qualification makes it suitable for automotive designs requiring robust performance across wide temperature ranges. Compare against similar series members like the NSVF5490SKT3G if lower current or different frequency characteristics are needed.
This part belongs to the NSVF5501SK family of RF bipolar transistors from onsemi. These components are engineered specifically for wireless communication applications requiring high linearity and low noise. The SK suffix typically denotes specific packaging and tape-and-reel configurations optimized for automated surface-mount assembly processes.
Check for direct substitutes within the NSVF5501SK series or equivalent AEC-Q101 qualified RF transistors from other manufacturers. Verify pin compatibility and electrical parameters such as VCEO, IC, and fT to ensure seamless integration without circuit redesign.