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The onsemi NSVMBT3904DW1T3G is a surface-mount NPN bipolar junction transistor (BJT) housed in a US-6 package. It features a maximum DC collector current of 200 mA and a collector-emitter voltage rating of 40 V. The device has a collector-base voltage of 60 V and an emitter-base voltage of 6 V. Key electrical parameters include a minimum DC current gain (hFE) of 40, a maximum power dissipation of 150 mW, and a transition frequency of 100 MHz. It operates within a temperature range of -55°C to +150°C.
Verify the specific suffix 'NSV' against official manufacturer documentation to confirm it denotes a standard commercial grade variant rather than a restricted automotive or military specification. Ensure the US-6 package dimensions match the target PCB footprint requirements before finalizing procurement orders.
Select this component when a small-signal NPN transistor is required for low-current applications up to 200 mA. The 40 V collector-emitter voltage provides sufficient headroom for standard 5 V logic systems. Consider the 150 mW power dissipation limit when designing thermal management strategies for densely packed boards.
This part belongs to the MBT3904 series of general-purpose NPN transistors manufactured by onsemi. The MBT3904 family is widely recognized for its reliability in consumer electronics and industrial control applications. The NSV prefix typically indicates a specific manufacturing line or compliance standard defined by the original equipment manufacturer.
Direct pin-compatible substitutes include the MBT3904DW1T1G and generic equivalents like the 2N3904 in SOT-563 packages, provided the voltage and current ratings meet the circuit requirements.