NSVMMBD1504ALT1G

NSVMMBD1504ALT1G

$0.27
  • Description:HIGH CONDUCTANCE LOW LEAKAGE DIO
  • Series:-

SKU:50e55c3d4b45 Category: Brand:

  
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Product Detailed Parameters

  • Description:HIGH CONDUCTANCE LOW LEAKAGE DIO
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):200 V
  • Current - Average Rectified (Io) (per Diode):200mA
  • Voltage - Forward (Vf) (Max) @ If:1.1 V @ 200 mA
  • Speed:Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:10 nA @ 180 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3 (TO-236)
  • Grade:Automotive
  • Qualification:AEC-Q101

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NSVMMBD1504ALT1G

Overview

The NSVMMBD1504ALT1G is a small signal switching diode manufactured by onsemi, housed in an SOT-23 (TO-236) surface-mount package. It features a maximum repetitive reverse voltage of 200 V and an average rectified forward current rating of 200 mA. The device supports a non-repetitive peak forward surge current of 2.0 A for a pulse width of 1/8 second. Electrical characteristics include a maximum forward voltage of 1.15 V at 300 mA and a total capacitance of 4.0 pF at 0 V reverse bias and 1 MHz frequency. Thermal performance specifies a power dissipation of 350 mW and a junction-to-ambient thermal resistance of 357 °C/W.

Feature Summary

  • Dual configuration with common cathode topology
  • Qualified for automotive applications under AEC-Q101 standards
  • Capable of PPAP submission for manufacturing process control

Applications

  • Automotive electronic circuits requiring unique site control
  • General purpose high-speed switching applications
  • Clamping and protection circuits in industrial systems

Procurement Notes

Verify the specific ordering suffix to confirm the presence of the NSV prefix, which indicates qualification for automotive applications and adherence to unique site and control change requirements. Confirm that the component meets AEC-Q101 reliability standards and is PPAP capable as documented in the manufacturer's ordering information table before finalizing procurement specifications.

Selection Notes

Select this component when a dual common cathode switching diode with a 200 V reverse voltage rating is required in a compact SOT-23 package. Ensure the application demands low leakage current and fast switching capabilities suitable for general-purpose or automotive environments. Verify that the thermal constraints align with the specified power dissipation and junction temperature limits provided in the datasheet.

Part Context

This part belongs to the MMBD1501A series of small signal diodes from onsemi. The NSV prefix distinguishes it as a variant specifically qualified for automotive use, differing from standard commercial versions by meeting stricter quality and traceability protocols. It shares the same electrical parameters as the base MMBD1504A model but includes additional certification for automotive supply chains.

Replacement Considerations

Direct substitutes within the same family include MMBD1504A for standard commercial applications. For automotive-specific replacements requiring AEC-Q101 qualification, verify equivalent parts with the NSV prefix or consult the manufacturer for updated cross-reference lists ensuring identical pinout and electrical ratings.

NSVMMBD1504ALT1GNSVMMBD1504ALT1G
$0.27
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