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The NSVMMUN2113LT3G is a single PNP digital transistor from onsemi, designed as a bias resistor transistor (BRT) to replace discrete components. It integrates a PNP transistor with internal base resistors in an SOT-23 surface-mount package. Key electrical specifications include a maximum collector-emitter voltage of -50 V and a continuous collector current of 100 mA. The device features a minimum DC current gain (hFE) of 80 and a typical input resistance of 47 kOhms. Power dissipation is rated at 246 mW, with an operating temperature range spanning from -55°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status and automotive qualification requirements prior to integration. Ensure the selected variant matches the required thermal and electrical parameters for the target application environment.
Select this component when a single PNP BRT with 50V rating and 100mA current capacity is required. The integrated 47kOhm input resistor eliminates external biasing components. Verify that the SOT-23-3 package dimensions fit the available board space and that the thermal performance meets the system's power dissipation needs under worst-case conditions.
This part belongs to the MMUN2113L series of digital transistors manufactured by onsemi. The 'NSV' prefix typically denotes automotive-grade variants within the manufacturer's portfolio. It serves as a direct replacement for discrete PNP transistor and resistor networks, offering a standardized solution for biasing applications in consumer and industrial electronics.
Direct substitutes include other PNP BRTs with identical pinouts and similar electrical ratings, such as the MMUN2113LT1G or MMUN2113LT3G from onsemi. Cross-manufacturer equivalents must be verified for matching hFE, VCEO, and package compatibility.