NSVMMUN2130LT1G

NSVMMUN2130LT1G

  • Description:PNP BIPOLAR DIGITAL TRANSISTOR (
  • Series:-

SKU:143fbb2f7e0e Category: Brand:

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Product Detailed Parameters

  • Description:PNP BIPOLAR DIGITAL TRANSISTOR (
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):1 kOhms
  • Resistor - Emitter Base (R2):1 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:3 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 5mA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:246 mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3 (TO-236)

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NSVMMUN2130LT1G

Overview

The NSVMMUN2130LT1G is a PNP Bipolar Digital Transistor (BRT) manufactured by onsemi. It integrates a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor, both specified at 1 kOhms. The device is housed in an SOT-23-3 surface-mount package. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of -50 V, a continuous collector current of -100 mA, and a power dissipation of 246 mW. It operates within a temperature range of -55°C to +150°C and holds AEC-Q101 qualification for automotive applications.

Feature Summary

  • Integrates a PNP transistor with dual 1 kOhm bias resistors to replace discrete components
  • AEC-Q101 qualified and PPAP capable for automotive reliability requirements
  • Simplifies circuit design by reducing board space and component count

Applications

  • Automotive electronic systems requiring unique site and control change management
  • General-purpose switching applications replacing single devices and external bias networks
  • Space-constrained designs utilizing SOT-23-3 surface-mount packaging

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm AEC-Q101 qualification status. Ensure the selected variant matches the required bias resistance values and polarity. Confirm RoHS compliance and halogen-free status as stated in the manufacturer's specifications before finalizing procurement orders.

Selection Notes

Select this component when a PNP digital transistor with equal 1 kOhm base and base-emitter resistors is required. Consider the -50 V voltage rating and -100 mA current limit for load compatibility. The SOT-23-3 package is suitable for high-density PCB layouts. Verify thermal dissipation capabilities relative to the application's ambient temperature constraints.

Part Context

This part belongs to the MMUN2130L series of pre-biased transistors designed to simplify biasing networks. The 'NSV' prefix indicates AEC-Q101 qualification and PPAP capability, distinguishing it from standard commercial variants. It serves as a direct replacement for discrete transistor-resistor combinations in signal processing and switching circuits.

Replacement Considerations

Direct substitutes include other PNP BRTs with similar 1k/1k resistor ratios and SOT-23-3 packages. Verify voltage and current ratings match or exceed the original design requirements. Check pinout compatibility to ensure seamless integration without PCB modifications.

NSVMMUN2130LT1GNSVMMUN2130LT1G

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