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The NSVMMUN2131LT1G is a single PNP Bias Resistor Transistor (BRT) from onsemi, featuring an integrated monolithic bias network with two resistors. It operates within a collector-emitter voltage range of 50 Vdc and supports continuous collector currents up to 100 mAdc. The device incorporates a typical input resistor value of 2.2 kOhms with a resistor ratio of 1. Packaged in a lead-free SOT-23 (TO-236) housing, it functions across a junction temperature range of -55°C to +150°C. This component is designed to replace discrete transistor and resistor combinations.
Verify that the specific ordering suffix matches the required package type and automotive qualification status. Confirm that the manufacturer's documentation aligns with the intended application environment, particularly regarding thermal dissipation limits and operating temperature ranges specified in the datasheet.
Select this component when a PNP digital transistor with a 2.2 kOhm input resistance is required. Ensure the design accommodates the 50 Vdc maximum voltage rating and 100 mA current limit. Consider the SOT-23 footprint constraints and verify thermal management capabilities against the derating curves provided in the official specifications.
This part belongs to the MUN2131/DTA123E family of digital transistors produced by onsemi. These devices share the same internal circuit topology but differ in packaging options such as SC-59, SC-70, and SOT-723. The NSV prefix specifically denotes automotive-grade manufacturing controls.
Direct replacements include MMUN2131LT1G for identical electrical performance in the same package without the automotive prefix. Other family members like MUN2131T1G offer the same functionality in different packages.