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The NSVMMUN2132LT1G is a PNP Bias Resistor Transistor (BRT) from the MMUN2132L series, featuring an integrated monolithic bias network with R1 = 4.7 kΩ and R2 = 4.7 kΩ. It operates within a collector-emitter voltage range of 50 Vdc and supports continuous collector currents up to 100 mAdc. The device provides a minimum DC current gain (hFE) of 15 at IC = 5.0 mA and VCE = 10 V. Thermal dissipation reaches 246 mW at 25°C in the SOT-23 package. It is AEC-Q101 qualified and PPAP capable for automotive applications.
Verify that the specific ordering suffix matches the required packaging configuration, as standard tape and reel quantities may vary by package type. Confirm that the 'NSV' prefix designation aligns with project requirements for automotive-grade supply chain controls and unique site tracking. Ensure compliance with RoHS and halogen-free specifications during procurement validation.
Select this component when a PNP digital transistor with 4.7 kΩ internal biasing resistors is required. The SOT-23 package offers a compact footprint suitable for space-constrained designs. Consider the AEC-Q101 qualification if the application targets automotive environments or requires strict quality management system adherence.
This part belongs to the MMUN2132L series of PNP Bipolar Digital Transistors. It shares electrical characteristics with the MUN2132T1G and MMUN2132LT1G but includes the 'NSV' prefix to denote automotive qualification. The series is designed to simplify circuit design by integrating bias resistors directly into the transistor package.
The MMUN2132LT1G serves as a direct functional equivalent without the automotive prefix. Other members of the MMUN2132L family share identical electrical parameters but differ in packaging or prefix designations.