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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：4.7 kOhms
- Resistor - Emitter Base (R2)：4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：15 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：246 mW
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
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Overview
The NSVMMUN2132LT1G is a PNP Bias Resistor Transistor (BRT) from onsemi, featuring an integrated monolithic bias network with R1 and R2 resistors. It operates within a collector-emitter voltage range of 50 Vdc and supports continuous collector currents up to 100 mAdc. The device includes a series base resistor and a base-emitter resistor to simplify circuit design. Electrical characteristics specify a minimum DC current gain (hFE) of 15 at IC = 5.0 mA and VCE = 10 V. The typical input resistance is 4.7 kOhms with a resistor ratio of 1.0. It is housed in a SOT-23 package and qualified under AEC-Q101 standards.
Feature Summary
- Integrates a single transistor with a monolithic bias network consisting of two resistors to replace individual components.
- AEC-Q101 qualified and PPAP capable for automotive and applications requiring unique site and control change requirements.
- Designed to reduce system cost and board space by eliminating external bias resistor networks.
Applications
- Automotive electronic circuits requiring AEC-Q101 qualification.
- General-purpose switching applications utilizing pre-biased PNP transistors.
- Circuit designs aiming to minimize component count and PCB footprint.
Procurement Notes
Verify the specific ordering suffix 'NSV' indicates compliance with automotive site and control change requirements as documented in the datasheet. Confirm package type matches the SOT-23 specification. Ensure application conditions align with the provided maximum ratings and thermal characteristics to maintain device reliability.
Selection Notes
Select this component when a PNP digital transistor with integrated biasing is required for space-constrained designs. Verify that the 50 V collector-emitter voltage and 100 mA current limits meet the circuit requirements. Consider the AEC-Q101 qualification if the application demands automotive-grade reliability and PPAP capability.
Part Context
This part belongs to the MUN2132/DTA143E family of digital transistors published by onsemi. It shares electrical specifications with variants like MMUN2132LT1G but differs in packaging or qualification status. The 'NSV' prefix specifically denotes automotive qualification and manufacturing site controls distinct from standard commercial versions.
Replacement Considerations
Direct functional equivalents include MMUN2132LT1G and MUN2132T1G, which share identical electrical parameters. However, verify package compatibility and AEC-Q101 qualification requirements before substitution, as the NSV prefix implies specific automotive manufacturing controls not present in all variants.
