NSVMMUN2135LT1G

Overview

The NSVMMUN2135LT1G is a PNP Bipolar Digital Transistor (BRT) manufactured by onsemi. It integrates a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor, housed in an SOT-23-3 surface-mount package. The device features a collector-emitter maximum voltage (VCEO) of -50 V and a continuous collector current of -100 mA. Typical input resistance is 4.7 kOhms with a typical resistor ratio of 1. It operates within a temperature range of -55°C to +150°C, dissipates up to 246 mW, and meets AEC-Q101 automotive qualification standards.

Feature Summary

• Integrates a PNP transistor with dual internal bias resistors to replace discrete components
• AEC-Q101 qualified for automotive applications requiring unique site and control change requirements
• Designed to reduce system cost and board space by eliminating external bias networks

Applications

• Automotive circuit design requiring AEC-Q101 compliance
• General-purpose switching applications replacing single devices and external resistor networks
• Space-constrained designs utilizing SOT-23-3 packaging

Procurement Notes

Verify the specific part number against official onsemi documentation to confirm pinout and electrical characteristics. Ensure the component meets required automotive qualification standards if used in vehicle systems. Cross-reference datasheet revisions to confirm material composition and RoHS compliance status before integration into final assemblies.

Selection Notes

Select this component when a PNP digital transistor with approximately 4.7 kOhm input resistance is required. Verify that the -50 V collector-emitter voltage rating and -100 mA current capacity align with the target circuit load. Confirm compatibility with SOT-23-3 footprint constraints and operating temperature ranges extending to +150°C.

Part Context

This part belongs to the MMUN2135L series of pre-biased transistors from onsemi. The 'NSV' prefix indicates it is qualified for automotive applications and subject to specific site and control change requirements under AEC-Q101 standards. It is part of a broader family of BRTs designed to simplify circuit design by integrating biasing resistors directly with the transistor die.

Replacement Considerations

Compatible substitutes include other PNP BRTs with similar 4.7 kOhm input resistance and -50 V ratings, such as the MMUN2135LT1G or equivalent parts from other manufacturers offering AEC-Q101 qualification in SOT-23-3 packages.