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The NSVMMUN2136LT1G is a single PNP Bias Resistor Transistor (BRT) from the MMUN2136L series, manufactured by onsemi. It integrates a transistor with a monolithic bias network comprising a 100 kΩ series base resistor and a 100 kΩ base-emitter resistor within an SOT-23 package. The device supports a maximum collector-emitter voltage of -50 Vdc and continuous collector current of -100 mAdc. Electrical characteristics include a minimum DC current gain of 80 at 5 mA and 10 V, and a typical input resistance ratio of 1.0. It operates across a junction temperature range of -55°C to +150°C and meets AEC-Q101 qualification standards.
Verify the specific ordering suffix 'NSV' indicates compliance with automotive site and control change requirements. Confirm that the SOT-23 package style matches the target PCB footprint. Ensure the component meets RoHS and Pb-Free specifications as documented in the datasheet. Validate electrical parameters against the application's operating conditions before finalizing procurement.
Select this component when a PNP digital transistor with equal base and base-emitter resistances is needed. The 100 kΩ internal resistance values are suitable for standard logic interfacing. Consider the thermal dissipation limits of the SOT-23 package for high-current applications. Verify compatibility with the system's voltage levels and required switching speeds.
This part belongs to the MMUN2136L series of digital transistors. It shares functional similarities with MUN2136T1G and MMUN2136LT1G but includes the NSV prefix for automotive qualification. The series is designed to reduce component count and simplify layout in compact electronic designs.
Direct substitutes include MUN2136T1G and MMUN2136LT1G. Verify pinout compatibility and electrical ratings before substitution. Ensure the replacement part meets the same AEC-Q101 requirements if used in automotive contexts.