SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The NSVMMUN2138LT1G is a PNP Bias Resistor Transistor (BRT) from onsemi, designed to replace discrete transistors and external bias networks. It integrates a single transistor with a monolithic bias network consisting of a series base resistor (R1 = 2.2 kΩ typical) and a base-emitter resistor (R2). The device is housed in an SOT-23 package and supports continuous collector currents up to 100 mA with a maximum collector-emitter voltage of 50 Vdc. It operates within a junction temperature range of -55°C to +150°C and features a minimum DC current gain (hFE) of 160 at IC = 5.0 mA and VCE = 10 V.
Verify the specific ordering suffix 'LT1G' against the manufacturer's official documentation to confirm the SOT-23 package configuration and tape-and-reel shipping format. Ensure compliance with RoHS and Pb-Free requirements as specified in the datasheet. Confirm that the NSV prefix indicates qualification for automotive or specialized application environments requiring controlled manufacturing sites.
Select this component when a compact PNP solution with integrated biasing is required for low-voltage switching. Verify that the 2.2 kΩ internal base resistor aligns with the target input drive levels. Consider the thermal dissipation limits of the SOT-23 package if operating near maximum current ratings. Ensure the 50 V voltage rating exceeds the maximum circuit supply voltage.
This part belongs to the MUN2138/NSVMMUN2138L family of digital transistors. It shares electrical characteristics with other variants like MMUN2138LT1G but differs in packaging and potential automotive qualification status indicated by the NSV prefix. The device is listed alongside discontinued parts such as MUN2138T1G in the same data sheet publication.
Direct functional equivalents include MMUN2138LT1G. Other packages in the same electrical family include MUN5138T1G (SC-70/SOT-323) and DTA123TE (SC-75), though pinouts and physical dimensions differ.