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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：4.7 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：35 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：246 mW
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
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Overview
The NSVMMUN2217LT1G is a single NPN digital transistor (BRT) manufactured by onsemi, designed to replace discrete devices and external bias resistor networks. It integrates a monolithic bias network consisting of a series base resistor and a base-emitter resistor into a single SOT-23-3 package. Key electrical parameters include a collector-emitter maximum voltage (VCEO) of 50 V, a continuous collector current of 100 mA, and a power dissipation of 400 mW. The device features a typical input resistance of 2.2 kOhms with a resistor ratio of 1. It operates within a temperature range of -55°C to +150°C and is RoHS compliant.
Feature Summary
- Integrates a single NPN transistor with a monolithic bias network comprising two resistors to simplify circuit design.
- Reduces board space and component count by eliminating the need for individual external bias components.
- Automotive-grade qualification with AEC-Q101 certification and PPAP capability for unique site and control change requirements.
Applications
- Automotive electronic systems requiring AEC-Q101 qualified components.
- General-purpose switching applications in consumer electronics.
- Driver circuits for low-power loads where simplified biasing is required.
Procurement Notes
Verify the specific suffix 'LT1G' against the manufacturer's latest datasheet to confirm pinout and electrical characteristics match your design requirements. Ensure compliance with RoHS directives and check for any recent Product Change Notifications (PCNs) regarding manufacturing site or material composition updates before finalizing procurement.
Selection Notes
Select this component when a single NPN digital transistor with a 2.2 kOhm base resistor and unity resistor ratio is needed. Confirm that the 50 V VCEO and 100 mA IC ratings exceed your circuit's maximum operating conditions. Consider the SOT-23-3 package constraints for thermal management and PCB layout space availability.
Part Context
This part belongs to the MMUN22xxL series of bipolar digital transistors from onsemi. The 'NSV' prefix indicates automotive-grade qualification, distinguishing it from standard commercial variants like the MMUN2217LT1G. It is part of a broader family of pre-biased transistors designed to reduce assembly costs and improve reliability in compact designs.
Replacement Considerations
Direct substitutes include the MMUN2217LT1G for non-automotive applications. For automotive contexts, verify equivalent parts from other manufacturers such as Nexperia or ROHM that offer matching NPN configuration, 50V rating, and SOT-23-3 packaging with similar resistor values.
