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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：1 kOhms
- Resistor - Emitter Base (R2)：1 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：3 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 5mA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：246 mW
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
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Overview
The NSVMMUN2230LT1G is an NPN Bias Resistor Transistor (BRT) from onsemi, featuring a monolithic bias network with R1 = 1 kΩ and R2 = 1 kΩ. It operates within a collector-emitter voltage range of 50 Vdc and supports continuous collector currents up to 100 mAdc. The device is housed in a SOT-23 package and functions across a junction temperature range of -55°C to +150°C. With a typical DC current gain of 5.0 at 5.0 mA and 10 V, it provides efficient switching capabilities while minimizing external component requirements.
Feature Summary
- Integrates a single transistor with a monolithic bias resistor network to replace discrete components
- Simplifies circuit design by reducing board space and component count
- Qualified for automotive applications under AEC-Q101 standards and PPAP capable
Applications
- Automotive electronic systems requiring unique site and control change requirements
- General-purpose digital switching circuits
- Logic level translation interfaces
Procurement Notes
Verify the specific ordering suffix 'NSV' confirms AEC-Q101 qualification and PPAP capability as documented in the datasheet. Ensure the package type matches the required SOT-23 footprint. Confirm RoHS compliance and lead-free status during procurement to meet environmental standards.
Selection Notes
Select this component when a compact NPN BRT solution with equal base and base-emitter resistors is needed. Verify that the 1 kΩ resistor values align with the target logic levels and drive requirements. Consider the thermal dissipation limits relative to the operating environment and PCB copper area.
Part Context
This part belongs to the MUN2230 series of digital transistors designed to simplify biasing networks. It shares characteristics with related parts like MMUN2230LT1G but includes the NSV prefix indicating automotive qualification. The series aims to reduce system costs and board space by integrating passive biasing elements directly with the active device.
Replacement Considerations
Direct substitutes include MMUN2230LT1G for standard applications. For automotive contexts, verify equivalent AEC-Q101 qualified parts with identical 1k/1k resistor ratios and SOT-23 packaging.
